Native point defects in MoS 2 and their influences on optical properties by first principles calculations

2018 ◽  
Vol 532 ◽  
pp. 184-194 ◽  
Author(s):  
Ashim Kumar Saha ◽  
Masato Yoshiya
2014 ◽  
Vol 16 (40) ◽  
pp. 22299-22308 ◽  
Author(s):  
J. Bekaert ◽  
R. Saniz ◽  
B. Partoens ◽  
D. Lamoen

Starting from first-principles calculations, many experimental observations such as photoluminescence spectra, charge carrier densities and freeze-out can be explained.


2014 ◽  
Vol 28 (02) ◽  
pp. 1450008 ◽  
Author(s):  
JIAN-MIN ZHANG ◽  
WANGXIANG FENG ◽  
PEI YANG ◽  
LIJIE SHI ◽  
YING ZHANG

Using first-principles calculations, we systematically investigate the defect physics in topological insulator AuTlS 2. An optimal growth condition is explicitly proposed to guide for the experimental synthesis. The stabilities of various native point defects under different growth conditions and different carrier environments are studied in detail. We show that the p-type conductivity is strongly preferred in AuTlS 2, and the band gap can be engineered by the control of intrinsic defects. Our results demonstrate that AuTlS 2 is an ideal p-type topological insulator which can be easily integrated with traditional semiconductor.


2013 ◽  
Vol 96 (10) ◽  
pp. 3304-3311 ◽  
Author(s):  
Bin Liu ◽  
Jiemin Wang ◽  
Fangzhi Li ◽  
Luchao Sun ◽  
Jingyang Wang ◽  
...  

2014 ◽  
Vol 97 (12) ◽  
pp. 4024-4030 ◽  
Author(s):  
Yanhui Zhang ◽  
Jiemin Wang ◽  
Bin Liu ◽  
Jingyang Wang ◽  
Haibin Zhang

2015 ◽  
Vol 3 (32) ◽  
pp. 8419-8424 ◽  
Author(s):  
Alessandra Catellani ◽  
Alice Ruini ◽  
Arrigo Calzolari

The effects of native defects (e.g. VO, VZn, H) on the TCO properties and color of an Al:ZnO (AZO) material are investigated using first principles calculations.


Author(s):  
William Lafargue-Dit-Hauret ◽  
Camille Latouche ◽  
Bruno Viana ◽  
Mathieu Allix ◽  
Stéphane Jobic

This article reports for the first time an in-depth ab initio computational study on intrinsic point defects in Sr4Al14O25 that serves as host lattice for numerous phosphors. Defect Formation Enthalpies...


2021 ◽  
Vol 21 ◽  
pp. 103827
Author(s):  
Jianrong Wang ◽  
Weibin Zhang ◽  
Qingfeng Wu ◽  
Shufang Gao ◽  
Yuanyuan Jin ◽  
...  

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