Magnetic field-induced bipolar resistive switching and negative differential resistance in (110)SrTiO 3 :Nb/ZnO heterojunctions

2017 ◽  
Vol 521 ◽  
pp. 69-72 ◽  
Author(s):  
Yinglong Fang ◽  
Jiachen Li ◽  
Yonghai Chen ◽  
Weifeng Zhang ◽  
Caihong Jia
Keyword(s):  
Magnetic Field ◽  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Bipolar Resistive Switching

Bipolar resistive switching with negative differential resistance effect in a Cu/BaTiO3/Ag device

2017 ◽  
Vol 19 (19) ◽  
pp. 11864-11868 ◽  
Author(s):  
L. J. Wei ◽  
Y. Yuan ◽  
J. Wang ◽  
H. Q. Tu ◽  
Y. Gao ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Si Substrate ◽  
Bipolar Resistive Switching ◽  
Switching Behaviour ◽  
Negative Differential Resistance Effect

We demonstrate that a bipolar non-volatile resistive switching behaviour with negative differential resistance (NDR) effect is realized in a Cu/BaTiO3/Ag device, which was deposited on a Si substrate via magnetron sputtering equipment.

Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Carrier Transport ◽  
Electronic Devices ◽  
Differential Resistance ◽  
Memory Devices ◽  
Transport Mechanisms ◽  
Resistive Switching Memory ◽  
Potential Applications ◽  
Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

scholarly journals Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Sueda Saylan ◽  
Haila M. Aldosari ◽  
Khaled Humood ◽  
Maguy Abi Jaoude ◽  
Florent Ravaux ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Hafnium Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Differential Resistance ◽  
Oxide Semiconductor ◽  
Bipolar Resistive Switching ◽  
Current Voltage ◽  
Device Structures ◽  
Memristive Systems ◽  
P Type

Abstract This work provides useful insights into the development of HfO2-based memristive systems with a p-type silicon bottom electrode that are compatible with the complementary metal–oxide–semiconductor technology. The results obtained reveal the importance of the top electrode selection to achieve unique device characteristics. The Ag/HfO2/Si devices have exhibited a larger memory window and self-compliance characteristics. On the other hand, the Au/HfO2/Si devices have displayed substantial cycle-to-cycle variation in the ON-state conductance. These device characteristics can be used as an indicator for the design of resistive-switching devices in various scenes such as, memory, security, and sensing. The current–voltage (I–V) characteristics of Ag/HfO2/Si and Au/HfO2/Si devices under positive and negative bias conditions have provided valuable information on the ON and OFF states of the devices and the underlying resistive switching mechanisms. Repeatable, low-power, and forming-free bipolar resistive switching is obtained with both device structures, with the Au/HfO2/Si devices displaying a poorer device-to-device reproducibility. Furthermore, the Au/HfO2/Si devices have exhibited N-type negative differential resistance (NDR), suggesting Joule-heating activated migration of oxygen vacancies to be responsible for the SET process in the unstable unipolar mode.

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