scholarly journals Effects of non-magnetic phase and deposition temperature on magnetic properties of FePt–MgO granular thin films on single-crystal MgO substrate

2016 ◽  
Vol 500 ◽  
pp. 111-117 ◽  
Author(s):  
Z.G. Qiu ◽  
D.C. Zeng ◽  
L.Z. Zhao ◽  
J. Wang ◽  
H.Y. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Single Crystal ◽  
Deposition Temperature ◽  
Magnetic Phase ◽  
Mgo Substrate

Characterization of spray-pyrolized superconducting YBaCuO thin films on single-crystal MgO by transmission electron microscopy

1990 ◽  
Vol 5 (8) ◽  
pp. 1605-1611 ◽  
Author(s):  
S. J. Golden ◽  
H. Isotalo ◽  
M. Lanham ◽  
J. Mayer ◽  
F. F. Lange ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Single Crystal ◽  
Processing Parameters ◽  
Transmission Electron ◽  
Film Substrate ◽  
Mgo Substrate

Superconducting YBaCuO thin films have been fabricated on single-crystal MgO by the spray-pyrolysis of nitrate precursors. The effects on the superconductive behavior of processing parameters such as time and temperature of heat treatment and film thickness were investigated. The superconductive behavior was found to be strongly dependent on film thickness. Films of thickness 1 μm were found to have a Tc of 67 K while thinner films showed appreciably degraded properties. Transmission electron microscopy studies have shown that the heat treatments necessary for the formation of the superconductive phase (for example, 950 °C for 30 min) also cause a substantial degree of film-substrate interdiffusion. Diffusion distances for Cu in the MgO substrate and Mg in the film were found to be sufficient to explain the degradation of the superconductive behavior in films of thickness 0.5 μm and 0.2 μm. From the concentration profiles obtained by EDS analysis diffusion coefficients at 950 °C for Mg into the YBaCuO thin film and for Cu into the MgO substrate were evaluated as 3 × 10−19 m2/s and 1 × 10−17 m2/s, respectively.

scholarly journals Growth, structural, and magnetic properties of single-crystal full-Heusler Co2TiGe thin films

2017 ◽  
Vol 121 (21) ◽  
pp. 213903 ◽  
Author(s):  
J. A. Logan ◽  
T. L. Brown-Heft ◽  
S. D. Harrington ◽  
N. S. Wilson ◽  
A. P. McFadden ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Single Crystal ◽  
Structural And Magnetic Properties ◽  
Full Heusler

Systematic Studies on Magnetron-Sputtered Indium Nitride

1992 ◽  
Vol 242 ◽  
Author(s):  
W. A. Bryden ◽  
S. A. Ecelberger ◽  
J. S. Morgan ◽  
T. O. Poehler ◽  
T. J. Kistenmacher
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Carrier Concentration ◽  
Deposition Temperature ◽  
Inert Gases ◽  
Morphological Transition ◽  
Heteroepitaxial Growth ◽  
High Carrier Concentration ◽  
High Carrier ◽  
Nitrogen Vacancies

ABSTRACTExtensive and systematic studies on reactive magnetron sputtering of InN thin films are summarized. The films have been deposited onto several types of substrates, with variations in such process parameters as deposition temperature, partial pressures of reactive and inert gases, sputtering power and gas flows. These films have been characterized by measuring their electrical, optical, structural and morphological properties. It has been shown that epitaxial growth of InN occurs on the basal plane of single-crystal (00.1) sapphire and (001) mica substrates and on the (111) face of cubic substrates such as silicon and zirconia.Two principal problems currently limit the usefulness of thin films of InN. First, although epitaxy can be attained with the proper choice of substrate type and deposition temperature, the resulting film is an agglomerate of epitaxial grains -- not a single crystal. Second, all magnetron sputtered InN films prepared to date have low mobility and high carrier concentration (likely due to nitrogen vacancies). In an attempt to address these problems, experiments on the growth and characterization of sputtered InN films have been carried out and are discussed here with particular emphasis on seeded heteroepitaxial growth and the effects of film deposition temperature.For example, it was found early that the growth of InN on the bare surface of several crystalline substrates at growth temperatures near 350°C results in a morphological transition that causes a degradation of semiconducting properties. The predeposition of an AIN seed layer inhibits this morphological transition and stabilizes a relatively high mobility state, but a still too high carrier concentration obtains. Further progress critically depends on optimizing the seeded heteroepitaxial growth technique in conjunction with the achievement of InN films with lower density of nitrogen vacancies.

Magnetic Properties of Epitaxial Mbe-Grown thin Fe3O4 Films on MgO (100)

1995 ◽  
Vol 384 ◽  
Author(s):  
P.A.A. Van Der Heijden ◽  
J.J. Hammink ◽  
PJ.H. Bloemen ◽  
R.M. Wolf ◽  
M.G. Van Opstal ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Ferromagnetic Resonance ◽  
Kerr Effect ◽  
Molecular Beam ◽  
Magnetic Behavior ◽  
Optical Kerr Effect ◽  
Magneto Optical Kerr Effect

ABSTRACTCoherent epitaxial Fe3O4 layers in the range of 0 to 400 Å have been grown by molecular beam epitaxy on single crystal MgO(100) substrates. The magnetic properties were studied by local magneto-optical Kerr effect experiments on a wedge shaped Fe3O4 layer, by ferromagnetic resonance and SQUID. The results show that the magnetic behavior of the Fe3O4 thin films resembles bulk Fe3O4 in the investigated thickness range.

Epitaxial Growth of MgO Single Crystal Thin Film in Oxygen Atmosphere

1992 ◽  
Vol 279 ◽  
Author(s):  
M. H. Yang ◽  
C. P. Flynn
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Bulk Diffusion ◽  
Oxygen Atmosphere ◽  
Mass Action ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffusion Studies ◽  
Mgo Substrate

ABSTRACTWe have studied the epitaxial growth of MgO single crystal thin films by depositing Mg onto MgO substrates in an oxygen atmosphere. This method provides a simple way to dope Mg18O layers uniformly into Mg16O. The well controlled layer thicknesses are suitable for bulk diffusion studies both in the MgO epilayer and the MgO substrate. The MgO growth rate was measured and found to be proportional to the Mg flux and to the square root of oxygen pressure at a given temperature, obeying the law of mass action. High quality MgO single crystal thin films, as indicated by RHEED and x-ray diffraction, were found to grow over u wide temperature range, as in the earlier work1 using e-beam evaporation.

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