Effect of high pressure on the electrical resistivity of optimally doped YBa2Cu3O7− single crystals with unidirectional planar defects

2013 ◽  
Vol 422 ◽  
pp. 33-35 ◽  
Author(s):  
R.V. Vovk ◽  
N.R. Vovk ◽  
G.Ya. Khadzhai ◽  
I.L. Goulatis ◽  
A. Chroneos
Keyword(s):  
High Pressure ◽  
Electrical Resistivity ◽  
Single Crystals ◽  
Planar Defects

Effect of high pressure on various diffusion mechanisms in oxygen-deficient ReBa2Cu3O7−x (Re = Y, Ho) single crystals

2019 ◽  
Vol 33 (04) ◽  
pp. 1950039
Author(s):  
G. Ya. Khadzhai ◽  
N. R. Vovk ◽  
R. V. Vovk ◽  
I. L. Goulatis ◽  
O. V. Dobrovolskiy
Keyword(s):  
High Pressure ◽  
Electrical Resistivity ◽  
Hydrostatic Pressure ◽  
Single Crystals ◽  
High Hydrostatic Pressure ◽  
Room Temperature ◽  
Diffusion Mechanisms ◽  
Diffusion Coalescence

The effect of high hydrostatic pressure on the relaxation of the electrical resistivity at room temperature of oxygen-nonstoichiometric [Formula: see text] (Re = Y, Ho) single crystals is investigated. The application of hydrostatic pressure has been revealed to significantly intensify the process of diffusion coalescence in the oxygen subsystem. At the same time, the intensity of the redistribution of labile oxygen is significantly changed when yttrium is replaced by holmium.

CRYSTAL GROWTH OF MULTI-LAYERED Ba2Ca4Cu5O10(O,F)2 (F-0245) SUPERCONDUCTOR UNDER HIGH PRESSURE

2005 ◽  
Vol 19 (01n03) ◽  
pp. 263-266 ◽  
Author(s):  
K. TOKIWA ◽  
H. OKUMOTO ◽  
S. KONO ◽  
S. IGA ◽  
K. TAKEMURA ◽  
...  
Keyword(s):  
High Pressure ◽  
Electrical Resistivity ◽  
Crystal Growth ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Cuprate Superconductors ◽  
Resistivity Measurements ◽  
Starting Mixture

Single crystals of multi-layered Ba 2 Ca 4 Cu 5 O 10( O , F )2 superconductor(F-0245) have been grown under a high pressure of 4.5 GPa . Single crystals with in-plane length of 500μm were typically obtained and flat shiny areas with more than 1 mm 2 were also observed on the surface of fractured samples. Tc values for these samples were determined by electrical resistivity measurements. These values were found to change from 70 K to 85 K by change of oxygen and fluorine contents in the starting mixture. The temperature dependence of resistivity showed characteristic of under-doped cuprate superconductors.

Influence of high pressure on the temperature dependence of electrical resistivity of Y1-xPrxBa2Cu3O7-δ single crystals

2021 ◽  
Vol 327 ◽  
pp. 114205
Author(s):  
G. Ya Khadzhaj ◽  
A.V. Matsepulin ◽  
A. Chroneos ◽  
Ι.L. Goulatis ◽  
R.V. Vovk
Keyword(s):  
High Pressure ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Single Crystals

Relaxation of the normal electrical resistivity induced by high-pressure in strongly underdoped YBa2Cu3O7–δ single crystals

2012 ◽  
Vol 407 (22) ◽  
pp. 4470-4472 ◽  
Author(s):  
R.V. Vovk ◽  
G.Ya. Khadzhai ◽  
Z.F. Nazyrov ◽  
I.L. Goulatis ◽  
A. Chroneos
Keyword(s):  
High Pressure ◽  
Electrical Resistivity ◽  
Single Crystals

Nano-probe x-ray analysis and high-resolution imaging on planar defects in high-pressure synthesized infinite-layer superconductor

1994 ◽  
Vol 52 ◽  
pp. 728-729
Author(s):  
Y. Y. Wang ◽  
H. Zhang ◽  
V. P. Dravid ◽  
H. Zhang ◽  
L. D. Marks ◽  
...  
Keyword(s):  
High Pressure ◽  
High Resolution ◽  
Atomic Structure ◽  
Emission Spectra ◽  
High Resolution Electron Microscopy ◽  
Planar Defects ◽  
X Ray ◽  
Infinite Layer ◽  
Resolution Electron ◽  
Resolution Imaging

Azuma et al. observed planar defects in a high pressure synthesized infinitelayer compound (i.e. ACuO2 (A=cation)), which exhibits superconductivity at ~110 K. It was proposed that the defects are cation deficient and that the superconductivity in this material is related to the planar defects. In this report, we present quantitative analysis of the planar defects utilizing nanometer probe xray microanalysis, high resolution electron microscopy, and image simulation to determine the chemical composition and atomic structure of the planar defects. We propose an atomic structure model for the planar defects.Infinite-layer samples with the nominal chemical formula, (Sr1-xCax)yCuO2 (x=0.3; y=0.9,1.0,1.1), were prepared using solid state synthesized low pressure forms of (Sr1-xCax)CuO2 with additions of CuO or (Sr1-xCax)2CuO3, followed by a high pressure treatment.Quantitative x-ray microanalysis, with a 1 nm probe, was performed using a cold field emission gun TEM (Hitachi HF-2000) equipped with an Oxford Pentafet thin-window x-ray detector. The probe was positioned on the planar defects, which has a 0.74 nm width, and x-ray emission spectra from the defects were compared with those obtained from vicinity regions.

scholarly journals Single Crystal Growth and Physical Properties of Pyroxene CoGeO3

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 378
Author(s):  
Li Zhao ◽  
Zhiwei Hu ◽  
Hanjie Guo ◽  
Christoph Geibel ◽  
Hong-Ji Lin ◽  
...  
Keyword(s):  
High Pressure ◽  
Magnetic Properties ◽  
Magnetic Susceptibility ◽  
Crystal Growth ◽  
Physical Properties ◽  
Single Crystal ◽  
Single Crystals ◽  
Magnetic Moments ◽  
Single Crystal Growth ◽  
The Impact

We report on the synthesis and physical properties of cm-sized CoGeO3 single crystals grown in a high pressure mirror furnace at pressures of 80 bar. Direction dependent magnetic susceptibility measurements on our single crystals reveal highly anisotropic magnetic properties that we attribute to the impact of strong single ion anisotropy appearing in this system with TN∼33.5 K. Furthermore, we observe effective magnetic moments that are exceeding the spin only values of the Co ions, which reveals the presence of sizable orbital moments in CoGeO3.

High Pressure effects on electrical resistivity and dielectric properties of nanocrystalline SnO2

2005 ◽  
Vol 66 (10) ◽  
pp. 1621-1627 ◽  
Author(s):  
P. Thangadurai ◽  
A. Chandra Bose ◽  
S. Ramasamy ◽  
R. Kesavamoorthy ◽  
T.R. Ravindran
Keyword(s):  
High Pressure ◽  
Electrical Resistivity ◽  
Dielectric Properties ◽  
Pressure Effects ◽  
High Pressure Effects

Femtosecond pump-probe characterization of high-pressure grown Al x Ga 1-x N single crystals

2009 ◽  
Author(s):  
Jie Zhang ◽  
A. Belousov ◽  
S. Katrych ◽  
J. Jun ◽  
J. Karpinski ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Crystals ◽  
Pump Probe

Crystal Field Analysis of the Magnetization Curves of HoFe11Ti under High Pressure

2013 ◽  
Vol 818 ◽  
pp. 72-76 ◽  
Author(s):  
Gang Su
Keyword(s):  
High Pressure ◽  
Hydrogen Atom ◽  
Electric Field ◽  
Single Crystals ◽  
High Pressures ◽  
Field Analysis ◽  
Magnetization Curves ◽  
Crystalline Electric Field ◽  
Crystalline Anisotropy ◽  
Magneto Crystalline Anisotropy

The crystalline electric field parameters Anmfor HoFe11Ti under different pressures were evaluated by fitting calculations to the magnetization curves measured on the single crystals at several temperatures. It was found that magneto-crystalline anisotropy has been changed by high pressure and the Anmfor HoFe11Ti under high pressures are strikingly different from Anmfor the corresponding HoFe11Ti H with interstitial hydrogen atom.

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