Absorption edge and optical constants of Tl2Ga2S3Se crystals from reflection and transmission, and ellipsometric measurements

2012 ◽  
Vol 407 (12) ◽  
pp. 2229-2233 ◽  
Author(s):  
M. Isik ◽  
N.M. Gasanly
1977 ◽  
Vol 81 (2) ◽  
pp. 665-670 ◽  
Author(s):  
G. Antonioli ◽  
D. Bianchi ◽  
V. Canevari ◽  
U. Emiliani ◽  
P. Podini

1989 ◽  
Vol 43 (6) ◽  
pp. 1027-1032 ◽  
Author(s):  
Thierry Buffeteau ◽  
Bernard Desbat

A general method based upon reflectance and transmittance measurements in the infrared region has been developed for the determination of the optical constants n( v) and k( v) of thin films deposited on any substrate (transparent or not). The corresponding computer program, written in FORTRAN 77, involves three main parts: (1) a matrix formalism to compute reflection and transmission coefficients of multilayered systems; (2) an iterative Newton-Raphson method to estimate the optical constants by comparison of the calculated and experimental values; and (3) a fast Kramers-Krönig transform to improve the accuracy of calculating the refractive index. The first part of this program can be used independently to simulate reflection and transmission spectra of any multilayered system using various experimental conditions. Two practical examples are given for illustration. Simulation of reflection spectra at grazing incidence for thin films deposited on a metal surface and determination of the optical constants for thin CaF2 layers deposited on a silicon substrate are presented.


A scanning X-ray interferometer was used to measure the forward scattering amplitude for zirconium at a number of wavelengths near the K absorption edge. The precision of previous experiments has usually been limited by lack of knowledge of either the sample density or its shape. These problems have been eliminated by making simultaneous measurements at two X-ray wavelengths. This new measurement algorithm can be applied at any wavelength which is accessible to X-ray interferometers. The X-ray optical constants of elements with Z ≥ 10 can be determined over the range 0.1 Å<A< 5Å to a precision which is sufficient to rekindle theoretical interest in the subject.


1986 ◽  
Vol 77 ◽  
Author(s):  
J. M. T. Pereira ◽  
P. K. Banerjee ◽  
S. S. Mitra

ABSTRACTAmorphous thin films of SixGe1-x:O (x = 0.70) were prepared by RF-sputtering at several substrate temperatures. The structural properties of these films were studied by IR spectroscopy and revealed features characteristic of hydrogen and/or oxygen bonded to silicon. The optical constants (n,k) were determined from reflection and transmission measurements at near-normal incidence for photon energies in the range of 1 eV and 2.6 eV. The optical gap was derived from the Taue plot and correlated with the composition of the samples. The increase of hydrogen and/or oxygen decreases the value of the refractive index and increases the optical gap.


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