Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface

2012 ◽  
Vol 407 (15) ◽  
pp. 3034-3037 ◽  
Author(s):  
Masatoshi Ogawa ◽  
Shoji Kamiya ◽  
Hayato Izumi ◽  
Yutaka Tokuda
Keyword(s):  
Single Crystal ◽  
Electronic Properties ◽  
Silicon Surface ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Formation of ultrathin iron silicide layers on the single-crystal silicon surface

2006 ◽  
Vol 48 (10) ◽  
pp. 2016-2020 ◽  
Author(s):  
M. V. Gomoyunova ◽  
D. E. Malygin ◽  
I. I. Pronin
Keyword(s):  
Single Crystal ◽  
Silicon Surface ◽  
Iron Silicide ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Formation of Buried Tisi2 Layers in Single Crystal Silicon by Ion Implantion

1987 ◽  
Vol 107 ◽  
Author(s):  
P. Madakson ◽  
G.J. Clark ◽  
F.K. Legoues ◽  
F.M. d'Heurle ◽  
J.E.E. Baglin
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Buried Layers

Buried TiSi2 layers, about 600Å thick and 900Å below the surface, were formed in < 111> silicon by ion implantation. The implantation was done with either 120 or 170 keV Ti+ to doses ranging from 5 x 1016 to 2 x 1017 ions/cm2, and at temperatures of between ambient and 650° C. Annealing was done at 600° C, 700°C and 1000°C. Continuous buried layers were achieved only with samples implanted with doses equal or greater than 1017 ions/cm2 and at temperatures above 450°C. Below this dose TiSi2, was present only as discrete precipitates. For room temperature implants, the TiSi2, layer is formed on the surface. The damage present consists of dispersed TiSi6 precipitates and microtwins.

A Three-Dimensional Monte Carlo Model for Phosphorus Implants into (100) Single-Crystal Silicon

1997 ◽  
Vol 490 ◽  
Author(s):  
Myung-Sik Son ◽  
Ho-Jung Hwang
Keyword(s):  
Monte Carlo ◽  
Single Crystal ◽  
Room Temperature ◽  
Monte Carlo Model ◽  
Three Dimensional ◽  
Single Crystal Silicon ◽  
Amorphous Region ◽  
Electronic Energy ◽  
Crystal Silicon ◽  
Dynamic Simulation Model

ABSTRACTAn alternative three-dimensional (3D) Monte Carlo (MC) dynamic simulation model for phosphorus implant into (100) single-crystal silicon has been developed which incorporates the effects of channeling and damage. This model calculates the trajectories of both implanted ions and recoiled silicons and concurrently and explicitly affects both ions and recoils due to the presence of accumulative damage. In addition, the model for room-temperature implant accounts for the self-annealing effect using our defined recombination probabilities for vacancies and interstitials saved on the unit volumes. Our model has been verified by the comparison with the previously published SIMS data over commonly used energy range between 10 and 180 keV, using our proposed empirical electronic energy loss model. The 3D formations of the amorphous region and the ultra-shallow junction around the implanted region could be predicted by using our model, TRICSI (TRansport Ions into Crystal-Silicon).

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