On the impact of stress on intrinsic defect formation during single crystal silicon growth

2012 ◽  
Vol 407 (15) ◽  
pp. 3009-3012 ◽  
Author(s):  
Jan Vanhellemont
Keyword(s):  
Single Crystal ◽  
Defect Formation ◽  
Single Crystal Silicon ◽  
Intrinsic Defect ◽  
Crystal Silicon ◽  
Silicon Growth ◽  
The Impact

Experimental Study on the Surface Cutting Mechanical Properties of Single Crystal Silicon in Micro-Nano Scale

2015 ◽  
Vol 1088 ◽  
pp. 779-782
Author(s):  
Xiao Jing Yang ◽  
Yong Li ◽  
Wei Xing Zhang
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Cutting Force ◽  
Silicon Surface ◽  
Single Crystal Silicon ◽  
Constant Load ◽  
Crystal Silicon ◽  
Force Microscopy ◽  
Atomic Force ◽  
The Impact

The experiment of cutting mechanical properties of single crystal silicon surface in the micro-nanoscale is researched using nanoindenter and atomic force microscopy. The result of the experiment shows that: in the constant load, the impact of different scratching velocity for single crystal silicon surface scratch groove width and chip accumulation volume are not big; but the cutting force and friction coefficient are not increases with the scratching velocity increases; when the scratching speed is certain, the size of load has a greater impact on the cutting mechanical properties of single crystal silicon surface, with the increase of the load, the cutting force increases, but the cutting force is not linearly growth.

The Impact of Graphite Furnace Parts on Radial Impurity Distribution in Czochralski‐Grown Single‐Crystal Silicon

1998 ◽  
Vol 145 (2) ◽  
pp. 621-628 ◽  
Author(s):  
Damien Gilmore ◽  
Tadahisa Arahori ◽  
Makoto Ito ◽  
Hiroki Murakami ◽  
Shin‐ichro Miki
Keyword(s):  
Single Crystal ◽  
Graphite Furnace ◽  
Single Crystal Silicon ◽  
Impurity Distribution ◽  
Crystal Silicon ◽  
The Impact ◽  
Grown Single Crystal

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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