Charge trapping at Pt/high-k dielectric (Ta2O5) interface

2011 ◽  
Vol 406 (17) ◽  
pp. 3348-3353 ◽  
Author(s):  
L. Stojanovska-Georgievska ◽  
N. Novkovski ◽  
E. Atanassova
Keyword(s):  
Charge Trapping ◽  
High K ◽  
High K Dielectric

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

2008 ◽  
Vol 608 ◽  
pp. 55-109 ◽  
Author(s):  
Jaroslaw Dąbrowski ◽  
Seiichi Miyazaki ◽  
S. Inumiya ◽  
G. Kozłowski ◽  
G. Lippert ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Transport ◽  
Dielectric Material ◽  
Electrical Breakdown ◽  
Charge Trapping ◽  
Basic Knowledge ◽  
Dielectric Films ◽  
Low Leakage ◽  
High K ◽  
High K Dielectric

Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters would have sufficiently low leakage and sufficiently long lifetime. But defects open new paths for carrier transport, increasing the currents by orders of magnitude, causing instabilities due to charge trapping, and promoting the formation of defects responsible for electrical breakdown events and for the failure of the film. We discuss how currents flow across the gate stack and how damage is created in the material. We also illustrate the contemporary basic knowledge on hazardous defects (including certain impurities) in high-k dielectrics using the example of a family of materials based on Pr oxides. As an example of the influence of stoichiometry on the electrical pa-rameters of the dielectric, we analyze the effect of nitrogen incorporation into ultrathin Hf silicate films.

scholarly journals ReS2 based high-k dielectric stack charge-trapping and synaptic memory

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGH08
Author(s):  
Ze-Hui Fan ◽  
Min Zhang ◽  
Lin Chen ◽  
Qing-Qing Sun ◽  
David Wei Zhang
Keyword(s):  
Charge Trapping ◽  
High K ◽  
High K Dielectric

Application of high-k dielectric stacks charge trapping for CMOS technology

2010 ◽  
Vol 166 (2) ◽  
pp. 170-173 ◽  
Author(s):  
Satinder K. Sharma ◽  
B. Prasad ◽  
Dinesh Kumar
Keyword(s):  
Charge Trapping ◽  
Cmos Technology ◽  
High K ◽  
High K Dielectric

Al2 O3 /HfO2 Multilayer High-k Dielectric Stacks for Charge Trapping Flash Memories

2018 ◽  
Vol 215 (16) ◽  
pp. 1700854 ◽  
Author(s):  
Dencho Spassov ◽  
Albena Paskaleva ◽  
Tomasz A. Krajewski ◽  
Elzbieta Guziewicz ◽  
Grzegorz Luka ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Flash Memories ◽  
High K ◽  
High K Dielectric

scholarly journals Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 849
Author(s):  
Dencho Spassov ◽  
Albena Paskaleva ◽  
Elżbieta Guziewicz ◽  
Vojkan Davidović ◽  
Srboljub Stanković ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Atomic Layer ◽  
Information Storage ◽  
Radiation Tolerance ◽  
Leakage Currents ◽  
High K ◽  
60Co Source ◽  
Retention Characteristics ◽  
High K Materials ◽  
High K Dielectric

High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.

ReS2 Based High-k Dielectric Stack Charge-Trapping Memory

2019 ◽  
Author(s):  
Z.-H. Fan ◽  
M. Zhang ◽  
L. Chen ◽  
Q.-Q. Sun ◽  
D.W. Zhang
Keyword(s):  
Charge Trapping ◽  
High K ◽  
Charge Trapping Memory ◽  
High K Dielectric

Charge trapping in ultrathin Gd2O3 high-k dielectric

2007 ◽  
Vol 84 (9-10) ◽  
pp. 1968-1971 ◽  
Author(s):  
A.N. Nazarov ◽  
Y.V. Gomeniuk ◽  
Y.Y. Gomeniuk ◽  
H.D.B. Gottlob ◽  
M. Schmidt ◽  
...  
Keyword(s):  
Charge Trapping ◽  
High K ◽  
High K Dielectric
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