Impurity photovoltaic effect in silicon solar cell doped with sulphur: A numerical simulation

2011 ◽  
Vol 406 (9) ◽  
pp. 1773-1777 ◽  
Author(s):  
Ghania Azzouzi ◽  
Mohamed Chegaar
2008 ◽  
Vol 92 (12) ◽  
pp. 1559-1565 ◽  
Author(s):  
S KHELIFI ◽  
M BURGELMAN ◽  
J VERSCHRAEGEN ◽  
A BELGHACHI

Author(s):  
Karim Salim ◽  
◽  
M.N Amroun ◽  
K Sahraoui ◽  
W Azzoui ◽  
...  

Increasing the efficiency of solar cells relies on the surface of the solar cell. In this work, we simulated a textured silicon solar cell. This simulation allowed us to predict the values of the surface parameters such as the angle and depth between the pyramids for an optimal photovoltaic conversion where we found the Icc: 1.783 (A) and Vco: 0.551 (V) with a cell efficiency of about 13.56%. On the other hand, we performed another simulation of a non-textured solar cell to compare our values and found Icc: 1.623 (A) and Vco: 0.556 (V) with an efficiency of about 12.76%.


2019 ◽  
Vol 246 ◽  
pp. 103-106 ◽  
Author(s):  
S. Chandramohan ◽  
V. Janardhanam ◽  
Tae Hoon Seo ◽  
Chang-Hee Hong ◽  
Eun-Kyung Suh

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