On the effects of air-exposure-time and time-dependency of Pb/p-Si Schottky diodes

2010 ◽  
Vol 405 (21) ◽  
pp. 4480-4487 ◽  
Author(s):  
H.A. Çetinkara ◽  
H.S. Güder
Keyword(s):  
Exposure Time ◽  
Schottky Diodes ◽  
Time Dependency ◽  
Air Exposure

Relationship Between Air Exposure Time and Water Relations of Cut Roses

2019 ◽  
Vol 27 (4) ◽  
pp. 267-277
Author(s):  
Suong Tuyet Thi Ha ◽  
Minjung Kwon ◽  
Toan Khac Nguyen ◽  
Jin-Hee Lim
Keyword(s):  
Water Relations ◽  
Exposure Time ◽  
Air Exposure

The Thermal Stability of Fluorine Doped Silicon Oxide Films Formed by Ecrcvd With SiF4 and O2 Gases

1996 ◽  
Vol 443 ◽  
Author(s):  
Seoghyeong Lee ◽  
Jae-Yoon Yoo ◽  
Jong-Wan Park
Keyword(s):  
Thermal Stability ◽  
Dielectric Properties ◽  
Plasma Treatment ◽  
Exposure Time ◽  
Moisture Absorption ◽  
Silicon Oxide ◽  
Reliability Test ◽  
Air Exposure ◽  
Doped Silicon ◽  
Thermal Stability Of

AbstractThe reliability of SiOF films for intermetal dielectrics in multilevel interconnections of ULSIs is investigated. SiOF films were deposited by ECRCVD using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films were carried out in terms of air exposure time. The reliability test of Cu / TiN / SiOF / Si specimen was carried out in terms of temperatures by RTA in N2 ambient. After O2 plasma treatment, no appreciable peak directly related to moisture absorption was detected. The C-V characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu / TiN / SiOF / Si system was found to be reliable up to 600 °C.

The effects of the time-dependent and exposure time to air on Au/epilayer n-Si Schottky diodes

1999 ◽  
Vol 6 (1) ◽  
pp. 89-94 ◽  
Author(s):  
H. A. Çetinkara ◽  
M. Sağlam ◽  
A. Türüt ◽  
N. Yalçın
Keyword(s):  
Exposure Time ◽  
Schottky Diodes ◽  
Time Dependent

Air exposure time of olive pastes during the extraction process and phenolic and volatile composition of virgin olive oil

2003 ◽  
Vol 80 (7) ◽  
pp. 685-695 ◽  
Author(s):  
Maurizio Servili ◽  
Roberto Selvaggini ◽  
Agnese Taticchi ◽  
Sonia Esposto ◽  
Gianfrancesco Montedoro
Keyword(s):  
Olive Oil ◽  
Exposure Time ◽  
Virgin Olive Oil ◽  
Extraction Process ◽  
Volatile Composition ◽  
Air Exposure

DIFFERENTIAL DEPLETION CAPACITANCE APPROXIMATION ANALYSIS UNDER DC VOLTAGE FOR AIR-EXPOSED Cu/n-Si SCHOTTKY DIODES

2018 ◽  
Vol 25 (01) ◽  
pp. 1850043
Author(s):  
A. KORKUT
Keyword(s):  
Reverse Bias ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Oxide Thickness ◽  
Interface State ◽  
State Density ◽  
Semiconductor Surface ◽  
Air Exposure ◽  
Dc Voltage ◽  
Current Voltage

It is well known that the semiconductor surface is easily oxidized by air-media in time. This work studieds the characterization of Schottky diodes and changes in depletion capacitance, which is caused by air exposure of a group of Cu/n-Si/Al Schottky diodes. First, data for current-voltage and capacitance-voltage were a Ren, and then ideality factor, barrier height, built-in potential ([Formula: see text], donor concentration and Fermi level, interfacial oxide thickness, interface state density were calculated. It is seen that depletion capacitance was calculate; whereafter built-in potential played an important role in Schottky diodes characteristic. Built-in potential directly affects the characteristic of Schottky diodes and a turning point occurs. In case of forward and reverse bias, depletion capacitance versus voltage graphics are matched, but in an opposite direction. In case of forward bias, differential depletion capacitance begins from minus values, it is raised to first [Formula: see text], then reduced to second [Formula: see text] under the minus condition. And it sharply gones up to positive apex, then sharply falls down to near zero, but it takes positive values depending on DC voltage. In case of reverse bias, differential depletion capacitance takes to small positive values. In other respects, we see that depletion characteristics change considerably under DC voltage.

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