Charge transfer through localized defect states with no change in on-site total spin and population

2009 ◽  
Vol 404 (23-24) ◽  
pp. 5212-5214
Author(s):  
V.A. Mashkov
Keyword(s):  
Charge Transfer ◽  
Total Spin ◽  
Defect States

Electron Spectroscopic Studies of Substoichiometric Tantalum Carbide

1985 ◽  
Vol 48 ◽  
Author(s):  
G. R. Gruzalski ◽  
D. M. Zehner ◽  
G. W. Ownby
Keyword(s):  
Charge Transfer ◽  
Binding Energy ◽  
Fermi Level ◽  
Valence Band ◽  
Spectroscopic Studies ◽  
Tantalum Carbide ◽  
Binding Energies ◽  
Defect States ◽  
Valence Band Structure ◽  
Band Spectra

ABSTRACTXPS was used to determine core-level binding energies and valence-band structure for TaCx over the range 0.5 ≲ × ≲ 1.0. As x decreased, the carbonls binding energy (BE) changed very little, the carbon-2s BE shifted toward the Fermi level, the position of the p-d valence-band peak shifted toward the Fermi level more, and the tantalum-4d and -4f BE's shifted toward the Fermi level even more, about 0.16 eV for a change in × of 0.1. In addition, the valence-band spectra exhibited structure between about 1 and 2 eV BE, and this structure increased as x decreased. These observations are explicable in terms of charge transfer and the formation of occupied defect states associated with carbon vacancies.

An Investigation of Spin and Charge States Associated with Metastable Defects in N-Type Hydrogenated Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
R. J. Rasmussen ◽  
J. D. Cohen ◽  
J. M. Essick
Keyword(s):  
Total Spin ◽  
Charge Ratio ◽  
Defect States ◽  
Large Magnitude ◽  
Experimental Conditions ◽  
Joint Application ◽  
Depletion Width ◽  
Wide Range ◽  
Capacitance Transient ◽  
Hydrogenated Amorphous

ABSTRACTDepletion-width-modulated (DWM) ESR spectroscopy and junction capacitance techniques were employed to investigate deep-defect states in various metastable states of 10 and 80 Vppm PH3-doped a-Si:H. From the joint application of these methods, we enumerate the change in total spin and charge associated with emission of carriers from states within the mobility gap resulting from a modulated bias voltage. We conclude that the magnitude of the modulated spin-to-charge ratio is nearly unity, consistent with earlier similar investigations of n-type a-Si:H, where the D-/D0 transition was shown to dominate. Furthermore, we present results of a previously unreported “quadrature” DWM-ESR signal of large magnitude under a wide range of experimental conditions. Similar related effects are also reported from spin- and capacitance-transient studies. These results clearly demonstrate that the changes in spin significandy lag corresponding changes in charge.

scholarly journals Facile synthesis of KCl:Sm3+ nanophosphor as a new OSL dosimetric material achieved through charge transfer between the defect states

RSC Advances ◽  
2017 ◽  
Vol 7 (23) ◽  
pp. 13836-13845 ◽  
Author(s):  
Mini Agarwal ◽  
S. K. Garg ◽  
K. Asokan ◽  
D. Kanjilal ◽  
Pratik Kumar
Keyword(s):  
Charge Transfer ◽  
Metal Halides ◽  
Defect States ◽  
Facile Synthesis ◽  
High Demand ◽  
Precise Control ◽  
Nanoscale Features ◽  
Dosimetric Materials

Since precise control of nanoscale features is in high demand, it is being exploited to develop and improve OSL dosimetric materials, where striking improvement might also be expected in lanthanide-doped metal halides.

Study of charge transfer in FeTi

1983 ◽  
Vol 41 ◽  
pp. 296-297
Author(s):  
J. Taft∅
Keyword(s):  
Charge Transfer ◽  
Charge Distribution ◽  
Electron Scattering ◽  
Periodic System ◽  
Electron Distribution ◽  
Scattering Amplitude ◽  
Transition Elements ◽  
Hartree Fock ◽  
Cscl Structure ◽  
The Right

It is well known that for reflections corresponding to large interplanar spacings (i.e., sin θ/λ small), the electron scattering amplitude, f, is sensitive to the ionicity and to the charge distribution around the atoms. We have used this in order to obtain information about the charge distribution in FeTi, which is a candidate for storage of hydrogen. Our goal is to study the changes in electron distribution in the presence of hydrogen, and also the ionicity of hydrogen in metals, but so far our study has been limited to pure FeTi. FeTi has the CsCl structure and thus Fe and Ti scatter with a phase difference of π into the 100-ref lections. Because Fe (Z = 26) is higher in the periodic system than Ti (Z = 22), an immediate “guess” would be that Fe has a larger scattering amplitude than Ti. However, relativistic Hartree-Fock calculations show that the opposite is the case for the 100-reflection. An explanation for this may be sought in the stronger localization of the d-electrons of the first row transition elements when moving to the right in the periodic table. The tabulated difference between fTi (100) and ffe (100) is small, however, and based on the values of the scattering amplitude for isolated atoms, the kinematical intensity of the 100-reflection is only 5.10-4 of the intensity of the 200-reflection.

Direct imaging of charge transfer

1996 ◽  
Vol 54 ◽  
pp. 680-681
Author(s):  
Yimei Zhu ◽  
J. Tafto
Keyword(s):  
Charge Transfer ◽  
Electron Diffraction ◽  
Scattering Amplitude ◽  
High Temperature Superconductors ◽  
Charge Carriers ◽  
Image Charge ◽  
Net Charge ◽  
Long Time ◽  
Electron Holes ◽  
First Time

The electron holes confined to the CuO2-plane are the charge carriers in high-temperature superconductors, and thus, the distribution of charge plays a key role in determining their superconducting properties. While it has been known for a long time that in principle, electron diffraction at low angles is very sensitive to charge transfer, we, for the first time, show that under a proper TEM imaging condition, it is possible to directly image charge in crystals with a large unit cell. We apply this new way of studying charge distribution to the technologically important Bi2Sr2Ca1Cu2O8+δ superconductors.Charged particles interact with the electrostatic potential, and thus, for small scattering angles, the incident particle sees a nuclei that is screened by the electron cloud. Hence, the scattering amplitude mainly is determined by the net charge of the ion. Comparing with the high Z neutral Bi atom, we note that the scattering amplitude of the hole or an electron is larger at small scattering angles. This is in stark contrast to the displacements which contribute negligibly to the electron diffraction pattern at small angles because of the short g-vectors.

Efficient and stable charge transfer channels for photocatalytic water splitting activity of CdS without sacrificial agents

2020 ◽  
Vol 8 (40) ◽  
pp. 20963-20969 ◽  
Author(s):  
Wei Chen ◽  
Guo-Bo Huang ◽  
Hao Song ◽  
Jian Zhang
Keyword(s):  
Charge Transfer ◽  
Water Splitting ◽  
Photocatalytic Water Splitting ◽  
Transfer Channel ◽  
Efficient Charge ◽  
Transfer Channels

An efficient charge transfer channel for improving the photocatalytic water splitting activity and durability of CdS without sacrificial agents.

Dynamic adjustment of emission from both singlets and triplets: the role of excited state conformation relaxation and charge transfer in phenothiazine derivates

2021 ◽  
Author(s):  
Weidong Qiu ◽  
Xinyi Cai ◽  
Mengke Li ◽  
Liangying Wang ◽  
Yanmei He ◽  
...  
Keyword(s):  
Excited State ◽  
Charge Transfer ◽  
Intramolecular Charge Transfer ◽  
Dynamic Adjustment ◽  
Twisted Intramolecular Charge Transfer

Dynamic adjustment of emission behaviours by controlling the extent of twisted intramolecular charge transfer character in excited state.

Magnetic properties of new charge-transfer complexes based on manganese porphyrins

1997 ◽  
Vol 90 (3) ◽  
pp. 407-413
Author(s):  
MARC KELEMEN ◽  
CHRISTOPH WACHTER ◽  
HUBERT WINTER ◽  
ELMAR DORMANN ◽  
RUDOLF GOMPPER ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Charge Transfer ◽  
Charge Transfer Complexes ◽  
Manganese Porphyrins
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