scholarly journals Atomic structure of threading dislocations in AlN thin films

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4886-4888 ◽  
Author(s):  
Yuki Tokumoto ◽  
Naoya Shibata ◽  
Teruyasu Mizoguhci ◽  
Takahisa Yamamoto ◽  
Yuichi Ikuhara
Keyword(s):  
Thin Films ◽  
Atomic Structure ◽  
Threading Dislocations

Atomic structure and strain field of threading dislocations in CeO2 thin films on yttria-stabilized ZrO2

2011 ◽  
Vol 98 (15) ◽  
pp. 153104 ◽  
Author(s):  
Hajime Hojo ◽  
Eita Tochigi ◽  
Teruyasu Mizoguchi ◽  
Hiromichi Ohta ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Structure ◽  
Strain Field ◽  
Threading Dislocations

Atomic structure of [0001]-tilt grain boundaries in ZnO:  A high-resolution TEM study of fiber-textured thin films

2004 ◽  
Vol 70 (12) ◽  
Author(s):  
Fumiyasu Oba ◽  
Hiromichi Ohta ◽  
Yukio Sato ◽  
Hideo Hosono ◽  
Takahisa Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
High Resolution Tem

EXAFS spectroscopy study of the atomic structure of ZnS nanocomposite thin films

2011 ◽  
Vol 52 (S1) ◽  
pp. 181-185 ◽  
Author(s):  
R. G. Valeev ◽  
A. N. Beltukov ◽  
F. Z. Gilmutdinov ◽  
É. A. Romanov ◽  
A. N. Deev ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Structure ◽  
Exafs Spectroscopy ◽  
Spectroscopy Study ◽  
Nanocomposite Thin Films

The atomic structure of growth interfaces in Y–Ba–Cu–O thin films

1991 ◽  
Vol 6 (11) ◽  
pp. 2264-2271 ◽  
Author(s):  
R. Ramesh ◽  
A. Inam ◽  
D.M. Hwang ◽  
T.S. Ravi ◽  
T. Sands ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Structure ◽  
Film Growth ◽  
Substrate Surface ◽  
Oriented Growth ◽  
Surface Steps ◽  
Nucleation Sites ◽  
Oriented Films ◽  
Second Phases ◽  
Ledge Mechanism

We have examined the atomic structure of growth interfaces in thin films of Y–Ba–Cu–O grown on [001] perovskite or cubic substrates. At substrate heater temperatures in the range of 780–820 °C c-axis oriented growth is observed on these substrates. On SrTiO3, the first layer appears to be either a BaO or a CuO2 plane while on LaAlO3 the first layer appears to be a CuO chain layer. The mismatch on the a-b plane is accommodated by the formation of interface dislocations. Defects on the substrate surface propagate as defects in the film. These defects are primarily translational boundaries and in some cases second phases. At lower substrate heater temperatures, i.e., 650–700 °C, a, b-axis growth dominates. Defects and steps on the substrate surface are more detrimental in the growth of a, b-axis oriented films, since they tend to favor the nucleation of c-axis oriented domains. This is ascribed to the ledge mechanism of c-axis film growth, for which the surface steps are good nucleation sites.

A subnanometric resolution method for studying local atomic structure of interface and surface of multilayered nanoheterostructure thin films

2018 ◽  
Vol 656 ◽  
pp. 44-52
Author(s):  
Yu.A. Babanov ◽  
V.V. Vasin ◽  
D.A. Ponomarev ◽  
D.I. Devyaterikov ◽  
L.N. Romashev ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Structure ◽  
Local Atomic Structure ◽  
Resolution Method

scholarly journals Atomic Structure and Chemistry of Defects in non-stoichiometric SrVO3 Thin Films

2013 ◽  
Vol 19 (S2) ◽  
pp. 1206-1207
Author(s):  
H. Mohammad Alipour ◽  
R.M. White ◽  
C. Eaton ◽  
J.A. Moyer ◽  
R. Engel-Herbret ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Structure

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Atomic structure and phase transitions in disordered Ti1−xGaxN thin films grown by pulsed laser deposition

1998 ◽  
Vol 83 (12) ◽  
pp. 7613-7617 ◽  
Author(s):  
Jian Z. Ren ◽  
Garry A. Rose ◽  
R. Stanley Williams ◽  
Corwin H. Booth ◽  
David K. Shuh
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Pulsed Laser Deposition ◽  
Atomic Structure ◽  
Pulsed Laser ◽  
Laser Deposition
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