Charge carrier scattering on the short-range potential of the crystal lattice defects in ZnCdTe, ZnHgSe and ZnHgTe

2009 ◽  
Vol 404 (23-24) ◽  
pp. 5022-5024 ◽  
Author(s):  
Orest P. Malyk
2014 ◽  
Vol 92 (11) ◽  
pp. 1372-1379 ◽  
Author(s):  
O.P. Malyk

The processes of electron scattering on a short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, and neutral and ionized impurities in wurtzite n-ZnO with impurity concentration ∼1 × 1017 cm−3 are considered. The temperature dependences of electron mobility and Hall factor in the range 15/550 K are calculated.


2014 ◽  
Vol 59 (7) ◽  
pp. 706-711 ◽  
Author(s):  
D.M. Freik ◽  
◽  
S.I. Mudryi ◽  
I.V. Gorichok ◽  
R.O Dzumedze ◽  
...  

2021 ◽  
Vol 16 (2) ◽  
Author(s):  
Caitlin M. Crawford ◽  
Erik A. Bensen ◽  
Haley A. Vinton ◽  
Eric S. Toberer

2009 ◽  
Vol 6 (5) ◽  
pp. 1112-1115 ◽  
Author(s):  
Sergei L. Pyshkin ◽  
John Ballato ◽  
Michael Bass ◽  
George Chumanov ◽  
Giorgio Turri

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