Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4768-4773 ◽  
Author(s):  
L.J. Brillson ◽  
Y. Dong ◽  
D. Doutt ◽  
D.C. Look ◽  
Z.-Q. Fang
2008 ◽  
Vol 254 (24) ◽  
pp. 8000-8004 ◽  
Author(s):  
L.J. Brillson ◽  
H.L. Mosbacker ◽  
M.J. Hetzer ◽  
Y. Strzhemechny ◽  
D.C. Look ◽  
...  

1996 ◽  
Vol 92 ◽  
pp. 362-366 ◽  
Author(s):  
R. Saiz-Pardo ◽  
R. Rincón ◽  
F. Flores

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44088-44095
Author(s):  
Ning Wu ◽  
Xue-Jing Zhang ◽  
Bang-Gui Liu

Strong Rashba effects at semiconductor surfaces and interfaces have attracted attention for exploration and applications. We show with first-principles investigation that applying biaxial stress can cause tunable and giant Rashba effects in ultrathin KTaO3 (KTO) (001) films.


1991 ◽  
Vol 58 (20) ◽  
pp. 2243-2245 ◽  
Author(s):  
Masao Yamada ◽  
Anita K. Wahi ◽  
Paul L. Meissner ◽  
Alberto Herrera‐Gomez ◽  
Tom Kendelewicz ◽  
...  

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