Cobalt-doped zinc oxide thin solid films deposited by chemical spray techniques on silicon (100) substrates: The effects of the [Co]/[Zn] ratio on the morphological and physical properties

2009 ◽  
Vol 404 (8-11) ◽  
pp. 1427-1431 ◽  
Author(s):  
D.R. Acosta ◽  
L. Castañeda ◽  
A. López-Suárez ◽  
A. Guillén-Santiago
Keyword(s):  
Zinc Oxide ◽  
Physical Properties ◽  
Thin Solid Films ◽  
Solid Films ◽  
Chemical Spray

Electroluminescent Devices Based on Junctions of Silicon-Rich Oxide with Indium Doped Zinc Oxide Thin Solid Films

2014 ◽  
Vol 9 (1) ◽  
pp. 13-20 ◽  
Author(s):  
F. Severiano ◽  
G. García ◽  
L. Castañeda ◽  
J. M. Gracia-Jiménez ◽  
A. Maldonado ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Thin Solid Films ◽  
Electroluminescent Devices ◽  
Solid Films

Chemical Spray Pyrolysis of Complex Thin Solid Films

1992 ◽  
Vol 282 ◽  
Author(s):  
Clayton W. Bates ◽  
Elizabeth B. Varner ◽  
Svetlana Alshvang ◽  
Keith Summers
Keyword(s):  
Spray Pyrolysis ◽  
Film Formation ◽  
Low Cost ◽  
Solution Chemistry ◽  
Chemical Spray Pyrolysis ◽  
Thin Solid Films ◽  
Solid Films ◽  
Chemical Spray ◽  
P Type ◽  
Substrate Temperatures

ABSTRACTChemical spray pyrolysis (CSP) is a technique in which compounds of the constituents of the thin film to be fabricated are dissolved in an aqueous solution which is subsequently sprayed onto a heated substrate using nitrogen as the atomizing gas. At relatively low substrate temperatures (150–400°C) chemical reactions take place in which film formation of the desired compound occurs concomitantly with the release of volatile chemical reactants. The technique has advantages that include: (1) simplicity, (2) low cost and simple equipment, (3) the ability to prepare films over large areas with various shapes with relative ease and (4) the possibility of varying the physical properties through chemical means in known ways at modest temperatures. Results on the preparation of CuInSe2 which is a defect dominated semiconductor of technological interest are presented. Both n- and p- type materials were prepared with resistivities varying from 10−2 – 104 ohm-cm illustrating the use of the control of solution chemistry to produce films with reproducibly controlled properties.

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