Band structure and lattice vibration properties of III-P ternary alloys

2008 ◽  
Vol 403 (12) ◽  
pp. 1990-1995 ◽  
Author(s):  
Abdulaziz Alahmary ◽  
Nadir Bouarissa ◽  
Ali Kamli
2004 ◽  
Vol 37 (14) ◽  
pp. 1980-1986 ◽  
Author(s):  
Stanislav Kamba ◽  
Hana Hughes ◽  
Dmitri Noujni ◽  
Santhi Surendran ◽  
Robert C Pullar ◽  
...  

2016 ◽  
Vol 22 (3) ◽  
pp. 706-716 ◽  
Author(s):  
Alberto Eljarrat ◽  
Xavier Sastre ◽  
Francesca Peiró ◽  
Sónia Estradé

AbstractIn the present work, the dielectric response of III-nitride semiconductors is studied using density functional theory (DFT) band structure calculations. The aim of this study is to improve our understanding of the features in the low-loss electron energy-loss spectra of ternary alloys, but the results are also relevant to optical and UV spectroscopy results. In addition, the dependence of the most remarkable features with composition is tested, i.e. applying Vegard’s law to band gap and plasmon energy. For this purpose, three wurtzite ternary alloys, from the combination of binaries AlN, GaN, and InN, were simulated through a wide compositional range (i.e., AlxGa1−xN, InxAl1−xN, and InxGa1−xN, with x=[0,1]). For this DFT calculations, the standard tools found in Wien2k software were used. In order to improve the band structure description of these semiconductor compounds, the modified Becke–Johnson exchange–correlation potential was also used. Results from these calculations are presented, including band structure, density of states, and complex dielectric function for the whole compositional range. Larger, closer to experimental values, band gap energies are predicted using the novel potential, when compared with standard generalized gradient approximation. Moreover, a detailed analysis of the collective excitation features in the dielectric response reveals their compositional dependence, which sometimes departs from a linear behavior (bowing). Finally, an advantageous method for measuring the plasmon energy dependence from these calculations is explained.


2009 ◽  
Vol 24 (9) ◽  
pp. 095008 ◽  
Author(s):  
S Mnasri ◽  
S Abdi-Ben Nasrallah ◽  
N Sfina ◽  
N Bouarissa ◽  
M Said

1992 ◽  
Vol 278 ◽  
Author(s):  
C. Wolverton ◽  
D. De Fontaine ◽  
H. Dreysse ◽  
G. Ceder

AbstractThe method of direct configurational averaging (DCA) has been proposed to study the electronic structure of disordered alloys. Local density of states and band structure energies are obtained by averaging over a small number of configrations within a tight-binding Hamiltonian. Effective cluster interactions, the driving quantities for ordering in solids, are computed for various alloys using a tight-binding form of the linearized muffin-tin orbital method (TB-LMTO). The DCA calculations are used to determine various energetic and thermodynamic quantities for binary and ternary alloys.


2006 ◽  
Vol 20 (22) ◽  
pp. 3199-3221 ◽  
Author(s):  
REZEK MOHAMMAD ◽  
ŞENAY KATIRCIOĞLU

The electronic band structure of AlN , AlSb , AlAs and their ternary alloys with In has been investigated by ETB. The ETB method has been formulated for sp3d2 basis and nearest neighbor interactions of the compounds and its energy parameters have been derived from the results of the present first principles calculations carried on AlN , AlSb and AlAs . It has been found that the present ETB energy parameters can produce the band structure of the compounds and their ternary alloys with In successfully.


2016 ◽  
Vol 65 (5) ◽  
pp. 057103
Author(s):  
Wang Xiao-Xu ◽  
Zhao Liu-Tao ◽  
Cheng Hai-Xia ◽  
Qian Ping

2020 ◽  
Vol 820 ◽  
pp. 153192 ◽  
Author(s):  
Kuilong Li ◽  
Tianyi Wang ◽  
Wenjia Wang ◽  
Xingguo Gao

1975 ◽  
Vol 16 (3) ◽  
pp. viii
Author(s):  
G.M. Rooney ◽  
A.L. Kipling ◽  
B.A. Lombos

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