Compositional dependence of the optical properties of the amorphous GexTe1−x system

2008 ◽  
Vol 403 (18) ◽  
pp. 2949-2955 ◽  
Author(s):  
N. El-Kabany
Keyword(s):  
Optical Properties ◽  
Compositional Dependence

Compositional dependence of optical properties of hot wall deposited CdSexTe1-x thin films

2004 ◽  
Vol 201 (10) ◽  
pp. 2312-2318 ◽  
Author(s):  
N. Muthukumarasamy ◽  
R. Balasundaraprabhu ◽  
S. Jayakumar ◽  
M. D. Kannan ◽  
P. Ramanathaswamy
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Compositional Dependence

scholarly journals Compositional Dependence of the Optical Properties of Vacuum Evaporated Thin GeSe2-GeTe-PbTe Films

2013 ◽  
Vol 44 ◽  
pp. 130-141 ◽  
Author(s):  
Kiril Petkov ◽  
Jordanka Tasseva ◽  
Venceslav Vassilev ◽  
Lilia Aljihmani
Keyword(s):  
Optical Properties ◽  
Compositional Dependence

scholarly journals Optical properties of Ge-richGe1−xSixalloys: Compositional dependence of the lowest direct and indirect gaps

2016 ◽  
Vol 93 (12) ◽  
Author(s):  
Chi Xu ◽  
J. D. Gallagher ◽  
C. L. Senaratne ◽  
J. Menéndez ◽  
J. Kouvetakis
Keyword(s):  
Optical Properties ◽  
Compositional Dependence

Compositional dependence of the optical properties on amorphous Agx(Ge0.25Se0.75)100−x thin films

2013 ◽  
Vol 377 ◽  
pp. 186-190 ◽  
Author(s):  
J.M. Conde Garrido ◽  
A. Piarristeguy ◽  
M.A. Ureña ◽  
M. Fontana ◽  
B. Arcondo ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Compositional Dependence

New Ge-Sn materials with adjustable bandgaps and lattice constants

2002 ◽  
Vol 744 ◽  
Author(s):  
Matthew R. Bauer ◽  
John Tolle ◽  
A. V. G. Chizmeshya ◽  
S. Zollner ◽  
J. Menendez ◽  
...  
Keyword(s):  
Optical Properties ◽  
Secondary Ion Mass Spectrometry ◽  
Compositional Dependence ◽  
X Ray Diffraction ◽  
Chemical Methods ◽  
Lattice Constants ◽  
New Class ◽  
Transmission Electron ◽  
Wide Range ◽  
Secondary Ion

ABSTRACTThe synthesis and optical properties of a new class of Si-based infrared semiconductors in the Ge1-x Snx system are described. Chemical methods based on deuterium-stabilized Sn hydrides and UHV-CVD were used to prepare a wide range of metastable compositions and structures directly on silicon. These materials exhibit high thermal stability, superior crystallinity, and unique crystallographic and optical properties, such as adjustable band gaps and lattice constants. These properties are characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction as well as infrared and Raman spectroscopies and spectroscopic ellipsometry. The films grow essentially strain free and display a strong compositional dependence of the band structure.

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