Consequences of dynamical diffraction and the Sagnac effect in LLL perfect single crystal interferometers

2006 ◽  
Vol 385-386 ◽  
pp. 1371-1373
Author(s):  
Kenneth C. Littrell
2010 ◽  
Vol 652 ◽  
pp. 255-259 ◽  
Author(s):  
M.Refai Muslih ◽  
Ridwan ◽  
Iman Kuntoro ◽  
Nobuaki Minakawa

The extinct layer of Si(311) perfect single crystal has been investigated by neutron diffraction method with the residual stress diffractometer DN1-M installed at the experimental hall of Indonesian multipurpose reactor RSG-GAS, in Serpong, which provides micro beam and point detector arrangement. A Si(311) perfect single crystal with thickness of 5mm was used in this experiment. The crystal was finely polished at one side and roughly polished at the opposite one. It was measured that diffracted beam from the finely polished side shows very low intensity with narrow peak profile, while for the roughly polished surface, shows stronger and broaden peak. The diffraction layer of rough surface was determined to be 0.36mm, while the smooth one was 0.28mm. It was also found that in the direction of crystal thickness in between layers no diffraction peak was detected. By these experiments it was confirmed that the applied stress on Si(311) perfect single crystal produced thicker diffraction layer. This technique is one that can be used in order to enhance the total diffracted neutron, which is desired to produce a good monochromator system.


Author(s):  
V. Gh. Mirzoyan ◽  
K. G. Truni ◽  
P. A. Grigoryan ◽  
K. M. Gevorgyan ◽  
M. Ghannad Dezfouli

1988 ◽  
Vol 41 (3) ◽  
pp. 433 ◽  
Author(s):  
T Takama ◽  
S Sato

This paper describes two experimental techniques measuring the Pendellosung beats using white radiation, developed in the authors' laboratory. The intensity of a Laue spot diffracted from a parallel-sided single crystal is successively measured at different Bragg angles, i.e. with different wavelengths. The values of structure factors are evaluated from extremum positions in the measured beats on the basis of the dynamical diffraction theory. In the first method, the integrated intensity diffracted from the whole exit surface is measured, and in the second, the measurement is made only at the centre of the Borrmann fan on the exit surface of a specimen. A discussion is given on the accuracy associated with the following origins of errors: (1) polarisation of incident white radiation, (2) measurement of specimen thickness, (3) measurement of wavelength, (4) determination of extremum positions, and (5) effect of defects in the crystal.


1985 ◽  
Vol 28 (1) ◽  
pp. 95-96
Author(s):  
Khachik S Bagdasarov ◽  
Vladimir B Braginskiĭ ◽  
Vladimir I Panov ◽  
V S Il'chenko

1985 ◽  
Vol 145 (1) ◽  
pp. 151-153 ◽  
Author(s):  
Kh.S. Bagdasarov ◽  
Vladimir B. Braginskii ◽  
Vladimir I. Panov ◽  
V.S. Il'chenko

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