The effect of series resistance and oxide layer formed by thermal oxidation on some electrical parameters of Al/SiO2/p-Si Schottky diodes

2007 ◽  
Vol 388 (1-2) ◽  
pp. 10-15 ◽  
Author(s):  
İlbilge Dökme
Keyword(s):  
Thermal Oxidation ◽  
Oxide Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Electrical Parameters

Electrical Properties Dependent on Schottky Diode Pd/PSC-pSi(100) Based on Hydrocarbon Gas Sensor

2009 ◽  
Vol 609 ◽  
pp. 195-199
Author(s):  
A. Keffous ◽  
M. Kechouane ◽  
Tahar Kerdja ◽  
Y. Belkacem ◽  
K. Bourenane ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Gas Sensing ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Electrical Parameters ◽  
Porous Sic ◽  
Sic Films

In this paper we present the study of a Schottky diode gas sensing by using porous SiC films with palladium as a catalytic metal. The Schottky diodes were used for the first time for hydrocarbon (C2H6) gas sensing. The properties of the porous SiC films formed by electrochemical method were investigated by scanning electron microscopy (SEM). The electrical measurements were made at room temperature (295 K) in different ambient. The effect of the porous surface structure was investigated by evaluating electrical parameters such as the ideality factor (n), barrier height (Bp) and series resistance (Rs). The porous layer significantly affects the electrical properties of the Schottky diodes. Analysis of current-voltage (I-V) characteristics showed that the forward current might be described by a classical thermal emission theory. The ideality factor determined by the I–V characteristics was found to be dependent on the SiC thickness. For a thinner SiC layer (0.16 µm), the electrical parameters n was found around 1.135, 0.7041 eV for a barrier height and 45  for a series resistance, but for a thicker one (1.6 µm) n, Bp and Rs were 1.368, 0.7756 eV and 130 , respectively. The low value of the series resistance obtained using Cheung’s method clearly indicated the high performance of the Schottky diode for thinner SiC layer. This effect showed the uniformity of the SiC layer. Finally, sensitivity around 66 % and selectivity of the sensors were reached by using the PSC layer at low voltages below 0.5 Volt.

AN ASSESSMENT ON ELECTRICAL CHARACTERIZATION OF Ni/n-Si SCHOTTKY RECTIFIERS WITH AND WITHOUT Ta2O5 INTERFACIAL OXIDE LAYER

2019 ◽  
Vol 26 (10) ◽  
pp. 1950073 ◽  
Author(s):  
N. NANDA KUMAR REDDY ◽  
P. ANANDA ◽  
V. K. VERMA ◽  
K. RAHIM BAKASH
Keyword(s):  
Schottky Barrier ◽  
Oxide Layer ◽  
Barrier Height ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Thermionic Emission ◽  
Mis Structure ◽  
Schottky Barrier Diodes ◽  
Mis Structures

We have fabricated Ni/[Formula: see text]-Si metal–semiconductor (MS) and Ni/Ta2O5/[Formula: see text]-Si metal-insulator–semiconductor (MIS) Schottky barrier diodes at room temperature and studied their current density–voltage (J–V) and capacitance–voltage (C–V) characteristic properties. The forward bias J–V characteristics of the fabricated MS and MIS devices have been evaluated with the help of the thermionic emission (TE) mechanism. Schottky barrier height (SBH) values of 0.73 and 0.84[Formula: see text]eV and ideality factor values of 1.75 and 1.46 are extracted using J–V measurements for MS and MIS Schottky barrier diodes without and with Ta2O5 interfacial oxide layer, respectively. It was noted that the incorporation of Ta2O5 interfacial oxide layer enhanced the value of SBH for the MIS device because this oxide layer produced the substantial barrier between Ni and [Formula: see text]-Si and this obtained barrier height value is better than the conventional metal/[Formula: see text]-Si (MS) Schottky diodes. The rectification ratio (RR) calculated at [Formula: see text][Formula: see text]V for the MS structure is found to be [Formula: see text] and the MIS structure is found to be [Formula: see text]. Using Chung’s method, the series resistance ([Formula: see text]) values are calculated using [Formula: see text]/[Formula: see text] vs I plot and are found to be 21,603[Formula: see text][Formula: see text] for the Ni/[Formula: see text]-Si (MS) and 5489[Formula: see text][Formula: see text] for the Ni/Ta2O5/[Formula: see text]-Si (MIS) structures, respectively. In addition, [Formula: see text] vs [Formula: see text] plot has been utilized to evaluate the series resistance ([Formula: see text]) values and are found to be 14,064[Formula: see text][Formula: see text] for the Ni/[Formula: see text]-Si (MS) and 2236[Formula: see text][Formula: see text] for the Ni/Ta2O5/[Formula: see text]-Si (MIS) structures, respectively. In conclusion, by analyzing the experimental results, it is confirmed that the good quality performance is observed in Ni/Ta2O5/[Formula: see text]-Si (MIS) type SBD when compared to Ni/[Formula: see text]-Si (MS) type SBD and can be accredited to the intentionally formed thin Ta2O5 interfacial oxide layer between Nickel and [Formula: see text]-type Si.

Electrical and Structural Characterization of Ti Contacts to Si0.89 Ge0.11/Si(001) Epilayers

1995 ◽  
Vol 402 ◽  
Author(s):  
M. Lyakas ◽  
M. Beregovsky ◽  
I. Moskowitz ◽  
M. Eizenberg
Keyword(s):  
Fermi Level ◽  
Structural Characterization ◽  
Ideality Factor ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Flat Band ◽  
Thermal Treatments ◽  
Electrical Parameters ◽  
Semiconductor Contacts

AbstractThe properties of thin (350 Å) Ti layers deposited on Si0.89Ge0.11 layers epitaxially grown on Si(001) were studied as a function of isochronal (30 min.) thermal treatments in the temperature range Ta=550–800°C. Both as-deposited and annealed at Ta up to 750°C Schottky diodes revealed near-ideal I–V and C–V characteristics with the same flat-band barrier height eV. The results indicate that at these Ta the Fermi level is pinned with respect to the conduction band.Annealing at 800°C resulted in an improvement of the Schottky diodes quality and a drop in and the series resistance Rs of the contacts. The values of the ideality factor n and ( measured were 1.03±0.02 and 0.56±0.007 eV, correspondingly. The electrical parameters of these metal/semiconductor contacts were correlated with the dynamics of interfacial reactions due to the applied heat-treatments.

scholarly journals Method for Determining the Schottky Diodes Electrical Parameters

2021 ◽  
Vol 26 (3) ◽  
Author(s):  
O. V. Tsukanov ◽  
O. H. Dramaretskyi ◽  
Yurii Viktorovych Didenko ◽  
Dmytro Dmytrovych Tatarchuk
Keyword(s):  
Standard Deviation ◽  
Potential Barrier ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Calculation Error ◽  
Electrical Parameters ◽  
Voltage Range ◽  
Temperature Potential ◽  
Direct Approximation

When studying the operation of Schottky diodes the most important electrical parameters are the height of the potential barrier, the coefficient of ideality, the saturation current and the series resistance of the material and contacts. These parameters can be determined from the experimental volt-ampere characteristics. The article considers the methods of determining these electrical parameters of Schottky diodes, as well as the factors that affect the accuracy of calculations. The existing methods for calculating the electrical parameters of Schottky diodes are analyzed, namely: the method of Norde, Roderick, Chong, Sato and the method of direct approximation. The Norde method was developed for a coefficient of ideality equal to one for cases where the effect of series resistance on the I–V characteristics makes a significant error in determining the barrier height by simpler methods. A significant disadvantage of this method is that in many cases the coefficient of ideality is not equal to one, even in the case of an ideal diode, which makes an error in the calculation result. The advantage of Roderick's method is the possibility of describing the forward and reverse branches of the I–V characteristics by one dependence, as well as taking into account measurements at voltages less than tripled temperature potential. The disadvantages of this method include the lack of consideration of the effect of series resistance, which may result in additional errors. The main advantage of the Chong method is the determination of the series resistance together with the height of the barrier and the coefficient of ideality, which not only provides additional information about the contact, but also convenient in terms of automation of the calculation process. The disadvantages include the possibility of applying the method only to the voltage range above the tripled temperature potential. The disadvantages of Sato methods and direct approximation include the fact that the calculation is performed at one point of the I–V curve, which can negatively affect the accuracy. It is also shown that these methods have a significant standard deviation of the calculated values from the experimental ones, which is due to the temperature dependence of the height of the potential barrier and the dependence of the coefficient of ideality on the voltage. Also, the reason for the increase in the calculation error of the electrical parameters in all five methods is the decrease in the length of the I–V characteristics in logarithmic coordinates. When using any of the considered methods, the calculation is performed in logarithmic coordinates, which complicates the determination of the boundaries of the I–V section, where the dependence of the parameters of the Schottky diode on the voltage is insignificant. A new algorithm for calculating the electrical parameters of Schottky diodes has been developed. Based on the conjugate gradient method, a method for optimizing the algorithm for calculating the electrical parameters of Schottky diodes was developed, which made it possible to reduce the standard deviation by more than an order of magnitude. The developed algorithm is verified by comparing the calculated volt-ampere characteristics of Schottky diodes with those obtained experimentally. To construct the calculated volt-ampere characteristics, the values of the electrical parameters of Schottky diodes were used, which were determined by the presented algorithm. The results of the calculation are in good agreement with the experimental data. The proposed method can be used both in scientific work to study the properties of semiconductor materials, and in production to control the quality of Schottky diodes.

On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes

2006 ◽  
Vol 83 (3) ◽  
pp. 577-581 ◽  
Author(s):  
M.M. Bülbül ◽  
S. Zeyrek ◽  
Ş. Altındal ◽  
H. Yüzer
Keyword(s):  
Series Resistance ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Dependent Series

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

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