Oxygen precipitation kinetics of Czochralski silicon preannealed under high pressure

2003 ◽  
Vol 340-342 ◽  
pp. 1041-1045
Author(s):  
Jin Xu ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Duanlin Que ◽  
A. Misiuk
Keyword(s):  
High Pressure ◽  
Precipitation Kinetics ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Kinetics Of

Effects of high pressure and SiC content on microstructure and precipitation kinetics of Al–20Si alloy

2014 ◽  
Vol 586 ◽  
pp. 639-644 ◽  
Author(s):  
P. Ma ◽  
C.M. Zou ◽  
H.W. Wang ◽  
S. Scudino ◽  
B.G. Fu ◽  
...  
Keyword(s):  
High Pressure ◽  
Precipitation Kinetics ◽  
Kinetics Of

Oxygen Aggregation Phenomena in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
Ronald C. Newman
Keyword(s):  
Activation Energy ◽  
Critical Analysis ◽  
Diffusion Rate ◽  
Apparent Increase ◽  
Enhanced Diffusion ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Normal Diffusion ◽  
Kinetics Of ◽  
Aggregation Phenomena

ABSTRACTOxygen precipitation in Czochralski silicon heated in the range 400–1050°C is reviewed. For T≥525° C, Si02 particles form at the normal diffusion rate and there is generation of self-interstitials. At the lower temperatures, the existence of the interfacial energy causes an apparent increase in the solid solubility as the agglomerates become very small: at 525° C they contain only an estimated 20–50 atoms. A critical analysis s then presented of possible oxygen aggregation reactions at even lower temperatures when thermal donors are generated. It is not yet possible to reconcile the kinetics of these two processes, even if self-interstitials and/or vacancy reactions are included. There is no evidence for enhanced diffusion of isolated oxygen atoms except as a transient process occurring during the relaxation of stress-induced dichroism. Oxygen aggregation at 450 ° C appears to be limited by the formation of dimers with an activation energy of 2.5eV, while thermal donors form with an activation energy of 1.7eV.

Oxygen precipitation in Czochralski silicon annealed at 450°C under a high pressure of 1GPa

2003 ◽  
Vol 327 (1) ◽  
pp. 60-64 ◽  
Author(s):  
Jin Xu ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Xuegong Yu ◽  
Chunlong Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Czochralski Silicon ◽  
Oxygen Precipitation
Sign in / Sign up

Export Citation Format

Share Document