Nearly frictionless transport of solid helium-4 at higher temperature regime

2011 ◽  
Vol 390 (21-22) ◽  
pp. 3888-3893 ◽  
Author(s):  
Kwang-Hua W. Chu
1991 ◽  
Vol 235 ◽  
Author(s):  
R. C. Da Selva ◽  
M. F. Da Silva ◽  
L. Thomé ◽  
A. A. Melo ◽  
J. C. Soares

ABSTRACTRBS/channeling analyses of high energy Au implantation into Mg are presented. The diffusion behaviour of Au was studied and the occurrence of essentially two distinct regimes were observed: the segregation regime at lower temperatures correlated with the damage introduced by the high energy implantation and the higher temperature regime as a normal thermally activated process of back-diffusion.


2002 ◽  
Vol 722 ◽  
Author(s):  
Phil Mages ◽  
Paul K. L. Yu

AbstractA Low Thermal Stress (LTS) process, involving the removal of most of the InGaAs(P) material, was used to allow for wafer-fusion of InGaAs(P) samples to Si. The formation and behavior of bubbles of trapped gas between the thinned layer of InGaAs(P) material and the thick Si substrate were studied due to the yield problems such bubbles represent. Observations revealed a low temperature regime <300°C, during which significant gas generation occurred but only weak, reversible bonds were formed. The higher temperature regime, 300°-650°C, was characterized by no significant increase in bubble density, but resulted in a reduction or complete blockage of gas escape during storage. Further investigation of the higher temperature regime indicated continued production of gas, but with a tendency of the gases produced above 300°C to escape from the interface without the formation of bubbles under normal conditions. This information led to the development of a scalable LTS process requiring no modification of the wafers prior to bonding and utilizing sample pre-heating to 300°C before InGaAs(P) removal and subsequent high temperature treatment to 650°C for permanent bond formation.


2009 ◽  
Vol 99 (1) ◽  
pp. 89-94 ◽  
Author(s):  
Eugene A. Milus ◽  
Kristian Kristensen ◽  
Mogens S. Hovmøller

Stripe rust (yellow rust) of wheat, caused by Puccinia striiformis f. sp. tritici, has become more severe in eastern United States, Australia, and elsewhere since 2000. Recent research has shown that this coincided with a global spread of two closely related strains that were similar based on virulence phenotype and amplified fragment length polymorphism. The objective of this research was to quantify differences in aggressiveness among isolates representative of the pre-2000 and post-2000 populations. Representative isolates were evaluated at low (10 to 18°C) and high (12 to 28°C) temperature regimes for latent period, lesion length, lesion width, lesion area, and spore production on adult plants of a susceptible wheat cultivar with no known genes for resistance to stripe rust. “New” isolates (since 2000) were significantly more aggressive than “old” isolates (before 2000) for all variables. At the low temperature regime, new isolates sporulated 2.1 days (16%) sooner, grew 0.3 mm per day (18%) faster, produced 999 (140%) more spores per inoculation site per day, and produced 6.5 (71%) more spores per mm2 of lesion per day compared with old isolates. At the high temperature regime, new isolates sporulated 3 days (26%) sooner, grew 0.2 mm per day (18%) and 2.2 mm2 per day (88%) faster, grew 1.2 mm (50%) wider, produced 774 (370%) more spores per inoculation site per day, and produced 6.2 (159%) more spores per mm2 of lesion per day than old isolates. New isolates showed significant adaptation to the warm temperature regime for all variables. Based on these results and previously published models for stripe rust epidemics, recent severe stripe rust epidemics were most likely enhanced by the pathogen's increased aggressiveness, especially at higher temperature. Furthermore, these results demonstrate that wheat rust fungi can adapt to warmer temperatures and cause severe disease in previously unfavorable environments.


2003 ◽  
Vol 90 (7) ◽  
Author(s):  
R. Nomura ◽  
Y. Suzuki ◽  
S. Kimura ◽  
Y. Okuda

1972 ◽  
Vol 5 (6) ◽  
pp. 2651-2665 ◽  
Author(s):  
J. P. Hansen ◽  
E. L. Pollock

2012 ◽  
Vol 168 (3-4) ◽  
pp. 221-234 ◽  
Author(s):  
S. Balibar ◽  
A. D. Fefferman ◽  
A. Haziot ◽  
X. Rojas
Keyword(s):  

2016 ◽  
Vol 482 ◽  
pp. 19-23
Author(s):  
Yuki Aoki ◽  
Izumi Iwasa ◽  
Takeru Miura ◽  
Akira Yamaguchi ◽  
Yuichi Okuda
Keyword(s):  

1994 ◽  
Vol 194-196 ◽  
pp. 939-940
Author(s):  
Norio Ogita ◽  
Masayuki Udagawa ◽  
Kohji Ohbayashi

1970 ◽  
Vol 2 (3) ◽  
pp. 870-882 ◽  
Author(s):  
D. S. Miyoshi ◽  
R. M. Cotts ◽  
A. S. Greenberg ◽  
R. C. Richardson

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