scholarly journals Fabrication of High Jc (Bi,Pb)2223 Thin Films by PLD and Post-annealing Process

2015 ◽  
Vol 65 ◽  
pp. 153-156 ◽  
Author(s):  
S. Takahira ◽  
Y. Ichino ◽  
Y. Yoshida
Keyword(s):  
Thin Films ◽  
Annealing Process ◽  
Post Annealing

Highly Doped P-Type, N-Type CdS Thin Films and Diodes

1993 ◽  
Vol 329 ◽  
Author(s):  
Wen P. Shen ◽  
Hoi S. Kwok
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Annealing Process ◽  
Laser Deposition ◽  
Post Annealing ◽  
Gaas Substrates ◽  
Cds Thin Film ◽  
Good Crystalline Quality ◽  
Cds Thin Films ◽  
P Type

AbstractCdS thin films with doping concentration as high as 1017 cm-3 for p-type or 1021 cm-3 for n-type were achieved by pulsed excimer laser deposition without any post-annealing process. These films were grown on InP or GaAs substrates with good crystalline quality. By using this technique, CdS thin film p-n junctions were produced successfully.

Effect of Coating Thickness (25–100 nm) on Properties of TiO2 Thin Films Prepared by DC Magnetron Sputtering with a TiO2 Target and Post-Annealing Process

2018 ◽  
Vol 24 (11) ◽  
pp. 8930-8934
Author(s):  
Noormariah Muslim ◽  
Muhammad Nur Syafi’ie Md Idris ◽  
Ying Woan Soon ◽  
Chee Ming Lim ◽  
Nyuk Yoong Voo
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Coating Thickness ◽  
Annealing Process ◽  
Dc Magnetron Sputtering ◽  
Tio2 Thin Films ◽  
Post Annealing

Effect of Post-Deposition Annealing Process on the Resistive Switching Behaviour of TiO2 Thin Films by Sol-Gel Method

2014 ◽  
Vol 925 ◽  
pp. 125-129 ◽  
Author(s):  
Nur Syahirah Kamarozaman ◽  
Mohd Firdaus Mohamed Soder ◽  
Mohamed Zahidi Musa ◽  
Raudah A. Bakar ◽  
Wan Fazlida Hanim Abdullah ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Annealing Process ◽  
Device Performance ◽  
Post Deposition Annealing ◽  
Post Annealing ◽  
Switching Behaviour ◽  
Post Deposition ◽  
Physical Thickness

The paper presents the memristive behaviour of spin-coated titania thin films on ITO substrate. The sample was annealed in air ambient at different annealing temperature and duration of 250 and 450 °C for 20 and 60 min. The effect of post-annealing process to the physical thickness and crystallinity of the films towards switching behaviour was studied. It was found that the thickness and crystallinity of the films increases as the post annealing process increases. Sample annealed at 250 °C for 20 min with thinner film showed better switching behaviour even though the sample is still in amorphous form. Thus, in our work, we believed that the crystallinity of the films does not affect the switching behaviour of the sample. The reliability of device performance was studied by repeating the measurement for three times.

Enhancement of the Light Emissions from Ag Doped ZnO Thin Films by Post-Annealing Process in Air

2019 ◽  
Vol 11 (5) ◽  
pp. 193-201
Author(s):  
Eun-Kyung Jeong ◽  
Dae-Hyun Kim ◽  
In-Soo Kim ◽  
Se-Young Choi
Keyword(s):  
Thin Films ◽  
Annealing Process ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Doped Zno

scholarly journals Synthesis and Properties of Polycrystalline MgB2 Thin Films by a Precursor Post-annealing Process

2003 ◽  
Vol 38 (11) ◽  
pp. 629-634
Author(s):  
Masao FUKUTOMI ◽  
Kazunori KOMORI ◽  
Kyoko KAWAGISHI ◽  
Yoshihiko TAKANO ◽  
Akiyoshi MATSUMOTO ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Process ◽  
Post Annealing ◽  
Mgb2 Thin Films

Fabrication and Characterization of Lead Silicate Doped PZT Thin Films

2002 ◽  
Vol 748 ◽  
Author(s):  
Junichi Karasawa ◽  
Yasuaki Hamada ◽  
Koji Ohashi ◽  
Takeshi Kijima ◽  
Eiji Natori ◽  
...  
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Annealing Process ◽  
Lead Silicate ◽  
Pzt Thin Films ◽  
Reliability Parameters ◽  
Post Annealing ◽  
Structure Changes

ABSTRACTThe crystal structure, surface morphology and electrical properties of PbSiOx (PSO) doped Pb(Zr,Ti)O3 (PZT) thin films were systematically investigated. The starting solutions of PSO-doped PZT were prepared by mixing sol-gel solutions of PZT and PSO. RTA-calcined thin films were crystallized by means of an oxygen partial pressure controlled post-annealing process. After the calcining process, lightly doped PZT thin films containing an amount of PSO dopant less than 1.0 at.% exhibit (111)-preferred orientation, and fine grains having a diameter of 50 nm and column-like structure. As the amount of PSO dopant is increased to 5.0 at.%, the (111) peaks becomes obscure and the (100) peaks together with the minor (110) peaks becomes dominant. The column-like structure changes into a plate-like structure having coarse grains whose diameter exceeds 500 nm. Further increasing the level of PSO dopant to 20.0 at.% causes the appearance of a pyrochlore phase having an extremely smooth surface without apparent grains. On the other hand, after the post-annealing process, the pyrochlore phase seen in the heavily doped PZT remarkably disappears, replaced by a perovskite phase together with PSO. The remnant polarization (Pr) gradually decreases as the amount of PSO dopant increases. The break down voltage, fatigue, imprint and other reliability parameters are improved within the proper doping range.

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