scholarly journals Rashba and Dresselhaus spin-orbit interaction strength in GaAs/GaAlAs heterojunctions

2012 ◽  
Vol 28 ◽  
pp. 95-98 ◽  
Author(s):  
M.A. Toloza Sandoval ◽  
A. Ferreira da Silva ◽  
E.A. de Andrada e Silva ◽  
G.C. La Rocca
Keyword(s):  
Interaction Strength ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction

scholarly journals Quantum Adiabatic Pumping in Rashba- Dresselhaus-Aharonov-Bohm Interferometer

Entropy ◽  
2019 ◽  
Vol 21 (9) ◽  
pp. 828
Author(s):  
Yasuhiro Tokura
Keyword(s):  
Interaction Strength ◽  
Orbit Interaction ◽  
External Control ◽  
Spin Orbit ◽  
Control Parameters ◽  
Spin Orbit Interaction ◽  
Spin Pumping ◽  
One Dimensional ◽  
Pumping Effect ◽  
Aharonov Bohm

We investigate the quantum adiabatic pumping effect in an interferometer attached to two one-dimensional leads. The interferometer is subjected to an Aharonov-Bohm flux and Rashba-Dresselhaus spin-orbit interaction. Using Brouwer’s formula and rigorous scattering eigenstates, we obtained the general closed formula for the pumping Berry curvatures depending on spin for general interferometers when the external control parameters only modulate the scattering eigenstates and corresponding eigenvalues. In this situation, pumping effect is absent in the combination of the control parameters of Aharonov-Bohm flux and spin-orbit interaction strength. We have shown that finite pumping is possible by modulating both Rashba and Dresselhaus interaction strengths and explicitly demonstrated the spin-pumping effect in a diamond-shaped interferometer made of four sites.

scholarly journals Spin-orbit interaction strength and anisotropy in III-V semiconductor heterojunctions

2013 ◽  
Vol 87 (8) ◽  
Author(s):  
M. A. Toloza Sandoval ◽  
A. Ferreira da Silva ◽  
E. A. de Andrada e Silva ◽  
G. C. La Rocca
Keyword(s):  
Interaction Strength ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Semiconductor Heterojunctions

COMBINED EFFECTS OF RASHBA SPIN-ORBIT INTERACTION STRENGTH AND ITS EXTENDED LENGTH IN QUANTUM WIRES

2006 ◽  
Vol 20 (06) ◽  
pp. 715-724
Author(s):  
HUI SU ◽  
BEN-YUAN GU
Keyword(s):  
Electron Spin ◽  
Quantum Wires ◽  
Interaction Strength ◽  
Orbit Interaction ◽  
Spin Precession ◽  
Combined Effects ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Rashba Spin ◽  
Relative Conductance

The combined effects of Rashba spin-orbit interaction (SOI) strength and the length of SOI excited region, which can be controlled by the external gate voltage deposited on the heterostructure, and on the electron spin precession in quasi-one-dimensional quantum wires are investigated by evaluating the relative conductance change, i.e. the ratio of difference of the conductances of the spin-up and spin-down polarized electrons to the total conductance. It is found that for proper wire width, electron spin precession can be smoothly achieved by co-adjusting the SOI strength and the length of SOI excited region. However, for wide quantum wire and strong SOI, the electron spin precession is significantly reduced due to the appearance of inter-subband mixing.

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Dirac nodal lines protected against spin-orbit interaction in IrO2

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Nodal Lines
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