scholarly journals Tracking and b-Tagging Performance with an Upgraded CMS Pixel Detector

2012 ◽  
Vol 37 ◽  
pp. 1032-1038 ◽  
Author(s):  
Pratima Jindal
Keyword(s):  
Pixel Detector ◽  
B Tagging

Invited PaperJosephson readout electronics for the hybrid superconducting pixel detector

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-147-Pr3-153 ◽  
Author(s):  
S. Pagano ◽  
V. G. Palmieri ◽  
O. Mukhanov ◽  
A. Esposito
Keyword(s):  
Pixel Detector ◽  
Readout Electronics

scholarly journals Upgrade of CMS Full Simulation for Run 2

2019 ◽  
Vol 214 ◽  
pp. 02012
Author(s):  
Vladimir Ivanchenko ◽  
Sunanda Banerjee
Keyword(s):  
Monte Carlo ◽  
Simulation Software ◽  
Pixel Detector ◽  
Test Beam ◽  
Hadronic Calorimeter ◽  
Cms Detector ◽  
The Status ◽  
Full Simulation

We report on the status of the CMS full simulation software for Run 2 operations of the LHC. Initially, Geant4 10.0p02 was used and about 16 billion events were produced for analysis of 2015-2016 data. In 2017, the CMS detector was updated with a new tracking pixel detector, a modified hadronic calorimeter electronics, and extra muon detectors added. Corresponding modifications were introduced in the full simulation and Geant4 10.2p02 was adopted for 2017 simulation productions; that includes an improved Geant4 for multi-threaded mode, which became the default for 2017. For the 2018 Monte Carlo productions, the full simulation has been updated further. The new Geant4 version 10.4 is used, adopted for the production after detailed validations using test-beam and collision data. The results of validations will be described in details. Several aspects of the migration to Geant4 10.4 and modifications in CMSSW simulation software will be also discussed.

Hybrid pixel detector development for medical radiography

2007 ◽  
Vol 573 (1-2) ◽  
pp. 129-132 ◽  
Author(s):  
S. Midgley ◽  
A. Berry ◽  
N. Benci ◽  
S. Morton ◽  
D. Phillips ◽  
...  
Keyword(s):  
Pixel Detector ◽  
Medical Radiography

scholarly journals Design and simulation of a new silicon pixel detector with equal width floating electrodes

AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 025315
Author(s):  
Chaosheng Wu ◽  
Xuanang Huang ◽  
Yongguang Xiao ◽  
Zheng Li
Keyword(s):  
Pixel Detector ◽  
Silicon Pixel Detector

scholarly journals ATLAS IBL: integration of new HW/SW readout features for the additional layer of Pixel Detector

2011 ◽  
Vol 6 (01) ◽  
pp. C01018-C01018
Author(s):  
G Bruni ◽  
M Bruschi ◽  
I D'Antone ◽  
J Dopke ◽  
D Falchieri ◽  
...  
Keyword(s):  
Pixel Detector ◽  
Additional Layer

scholarly journals Influence of Pixel Etching on Electrical and Electro-Optical Performances of a Ga-Free InAs/InAsSb T2SL Barrier Photodetector for Mid-Wave Infrared Imaging

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 194
Author(s):  
Maxime Bouschet ◽  
Ulises Zavala-Moran ◽  
Vignesh Arounassalame ◽  
Rodolphe Alchaar ◽  
Clara Bataillon ◽  
...  
Keyword(s):  
Dark Current ◽  
Infrared Imaging ◽  
Diffusion Length ◽  
Lateral Diffusion ◽  
Pixel Detector ◽  
Dark Current Density ◽  
Etching Depth ◽  
Photo Response ◽  
Wet Chemical ◽  
Absorbing Layer

In this paper, the influence of etching depth on the dark current and photo-response of a mid-wave infrared Ga-free T2SL XBn pixel detector is investigated. Two wet chemical etching depths have been considered for the fabrication of a non-passivated individual pixel detector having a cut-off wavelength of 5 µm at 150 K. This study shows the strong influence of the lateral diffusion length of a shallow-etched pixel on the electro-optical properties of the device. The lowest dark current density was recorded for the deep-etched detector, on the order of 1 × 10−5 A/cm2 at 150 K and a bias operation equal to −400 mV. The corresponding quantum efficiency was measured at 60% (without anti-reflection coating) for a 3 µm thick absorbing layer. A comparison of experimental results obtained on the two kinds of etched pixels demonstrates the need for a deep-etching process combined with efficient passivation for FPA manufacturing.

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