scholarly journals A MEMS-based piezoelectric cantilever patterned with PZT thin film array for harvesting energy from low frequency vibrations

2011 ◽  
Vol 19 ◽  
pp. 129-133 ◽  
Author(s):  
Huicong Liu ◽  
Chenggen Quan ◽  
Cho Jui Tay ◽  
Takeshi Kobayashi ◽  
Chengkuo Lee
Keyword(s):  
Thin Film ◽  
Low Frequency ◽  
Pzt Thin Film ◽  
Piezoelectric Cantilever

DEVELOPMENT OF SELF-SENSITIVE PIEZOELECTRIC CANTILEVER UTILIZING PZT THIN FILM DEPOSITED ON SOI WAFER

2007 ◽  
Vol 89 (1) ◽  
pp. 116-122 ◽  
Author(s):  
TAKESHI KOBAYASHI ◽  
MASAAKI ICHIKI ◽  
RYUTARO MAEDA
Keyword(s):  
Thin Film ◽  
Pzt Thin Film ◽  
Piezoelectric Cantilever

Spalling Technology of PZT Thin Film Capacitor using Internal Stress

2014 ◽  
Vol 134 (4) ◽  
pp. 85-89
Author(s):  
Kazutaka Sueshige ◽  
Fumiaki Honda ◽  
Tadatomo Suga ◽  
Masaaki Ichiki ◽  
Toshihiro Itoh
Keyword(s):  
Thin Film ◽  
Internal Stress ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Thin Film

Piezoelectric PZT thin-film transformers with a ring–dot structure

2020 ◽  
Vol 59 (SP) ◽  
pp. SPPD09
Author(s):  
Sang-Hyo Kweon ◽  
Kazuki Tani ◽  
Kensuke Kanda ◽  
Sahn Nahm ◽  
Isaku Kanno
Keyword(s):  
Thin Film ◽  
Pzt Thin Film

Measurement of d15 Shear-Mode Piezoelectric Response in PZT Thin Film

2009 ◽  
Vol 421-422 ◽  
pp. 95-98
Author(s):  
Tsuyoshi Aoki ◽  
Shigeyoshi Umemiya ◽  
Masaharu Hida ◽  
Kazuaki Kurihara
Keyword(s):  
Thin Film ◽  
Fem Analysis ◽  
Active Part ◽  
Piezoelectric Response ◽  
Small Displacement ◽  
Shear Mode ◽  
Mems Devices ◽  
Pzt Film ◽  
Pzt Thin Film ◽  
Piezoelectric Constants

Piezoelectric films using d15 shear-mode can be applied to many useful MEMS devices. The small displacement derived from the d15 shear-mode was directly observed by a SPM measurement. An isolated PZT(52/48) active part having a pair of driving Cu electrodes was processed in a 5 m-thick sputtering film. The displacement measurement of the active part and its FEM analysis suggested that the estimated d15 piezoelectric constant of the film was 590 pm/V. And, the d31 value of the film was -120 pm/V measured by a conventional cantilever method. The obtained piezoelectric constants of the PZT film are near those of bulk.

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

2009 ◽  
Vol 105 (12) ◽  
pp. 124504 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Sung Hun Jin ◽  
M. S. Shur ◽  
Mun-Soo Park
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film
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