scholarly journals Short-time-scale threshold voltage shifts in organic field-effect transistors caused by dipoles on insulator surface

2011 ◽  
Vol 14 ◽  
pp. 217-220
Author(s):  
Kouji Suemori ◽  
Misuzu Taniguchi ◽  
Sei Uemura ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Time Scale ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Short Time Scale ◽  
Organic Field Effect Transistors ◽  
Insulator Surface ◽  
Short Time

Influence of fine roughness of insulator surface on threshold voltage stability of organic field-effect transistors

2008 ◽  
Vol 93 (3) ◽  
pp. 033308 ◽  
Author(s):  
Kouji Suemori ◽  
Sei Uemura ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Voltage Stability ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Insulator Surface

Threshold voltage stability of organic field-effect transistors for various chemical species in the insulator surface

2007 ◽  
Vol 91 (19) ◽  
pp. 192112 ◽  
Author(s):  
Kouji Suemori ◽  
Sei Uemura ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Voltage Stability ◽  
Field Effect Transistors ◽  
Chemical Species ◽  
Organic Field Effect Transistors ◽  
Insulator Surface

Temporal Changes in Source–Drain Current for Organic Field-Effect Transistors Caused by Dipole on Insulator Surface

2008 ◽  
Vol 1 ◽  
pp. 061801 ◽  
Author(s):  
Kouji Suemori ◽  
Misuzu Taniguchi ◽  
Sei Uemura ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Temporal Changes ◽  
Organic Field Effect Transistors ◽  
Insulator Surface

Organic Field-Effect Transistors with a Low Pinch-Off Voltage and a Controllable Threshold Voltage

2008 ◽  
Vol 20 (3) ◽  
pp. 611-615 ◽  
Author(s):  
Y. Wang ◽  
Y. Q. Liu ◽  
Y. B. Song ◽  
S. H. Ye ◽  
W. P. Wu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Degradation of organic field-effect transistors made of pentacene

2004 ◽  
Vol 19 (7) ◽  
pp. 1999-2002 ◽  
Author(s):  
Ch. Pannemann ◽  
T. Diekmann ◽  
U. Hilleringmann
Keyword(s):  
Charge Carrier ◽  
Threshold Voltage ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Ambient Air ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Semiconducting Material

This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.

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