Indium oxide inverse opal films synthesized by structure replication method

2016 ◽  
Vol 19 ◽  
pp. 55-63 ◽  
Author(s):  
Sabrina Amrehn ◽  
Daniel Berghoff ◽  
Andreas Nikitin ◽  
Matthias Reichelt ◽  
Xia Wu ◽  
...  
Keyword(s):  
Indium Oxide ◽  
Inverse Opal ◽  
Replication Method

scholarly journals High-temperature stable indium oxide photonic crystals: transducer material for optical and resistive gas sensing

2016 ◽  
Vol 5 (1) ◽  
pp. 179-185 ◽  
Author(s):  
Sabrina Amrehn ◽  
Xia Wu ◽  
Thorsten Wagner
Keyword(s):  
Indium Oxide ◽  
Gas Sensing ◽  
Substrate Material ◽  
Optical Methods ◽  
Inverse Opal ◽  
X Ray Diffraction ◽  
Minimum Requirement ◽  
Good Thermal Stability ◽  
Inverse Opal Structure ◽  
Photonic Band

Abstract. Indium oxide (In2O3) inverse opal is a promising new transducer material for resistive and optical gas sensors. The periodically ordered and highly accessible pores of the inverse opal allow the design of resistive sensors with characteristics independent of structure limitations, such as diffusion effects or limited conductivity due to constricted crosslinking. Additionally the photonic properties caused by the inverse opal structure can be utilized to read out the sensors' electronical state by optical methods. Typically semiconducting sensors are operated at high temperatures (> 300 °C). To maintain a good thermal stability of the transducer material during operation is a minimum requirement. We present results on the synthesis and investigation of the structural stability of the In2O3 inverse opal structure up to a temperature of 550 °C (limit of substrate material). As will be shown, their optical properties are maintained with only slight shifts of the photonic band gaps which can be explained by the results from the structural characterization using X-ray diffraction and electron microscopy combined with optical simulations.

Replication of Wet Objects and Cells

1974 ◽  
Vol 32 ◽  
pp. 102-103
Author(s):  
S. Basu ◽  
D. F. Parsons
Keyword(s):  
Water Vapor Pressure ◽  
High Vacuum ◽  
Polystyrene Latex ◽  
Vacuum System ◽  
Saturated Water Vapor ◽  
Replication Method ◽  
New Methods ◽  
Saturated Water ◽  
Water Vapors ◽  
Intermediate Chamber

We are approaching the invasiveness of cancer cells from the studies of their wet surface morphology which should distinguish them from their normal counterparts. In this report attempts have been made to provide physical basis and background work to a wet replication method with a differentially pumped hydration chamber (Fig. 1) (1,2), to apply this knowledge for obtaining replica of some specimens of known features (e.g. polystyrene latex) and finally to realize more specific problems and to improvize new methods and instrumentation for their rectification. In principle, the evaporant molecules penetrate through a pair of apertures (250, 350μ), through water vapors and is, then, deposited on the specimen. An intermediate chamber between the apertures is pumped independently of the high vacuum system. The size of the apertures is sufficiently small so that full saturated water vapor pressure is maintained near the specimen.

Effects of dopant concentration on the microstructure of tin- doped indium oxide thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 716-717
Author(s):  
I. A. Rauf
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Ionic Radius ◽  
Free Carrier ◽  
Electron Gun ◽  
Periodic Lattice ◽  
Oxide Thin Films ◽  
Transmission Electron ◽  
The Difference ◽  
Dopant Atoms

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.

Defect structure examination of Sn-doped indium oxide (ITO)

2007 ◽  
Vol 2007 (suppl_26) ◽  
pp. 489-494 ◽  
Author(s):  
J. Popović ◽  
E. Tkalčec ◽  
B. Gržeta ◽  
C. Goebbert ◽  
V. Ksenofontov ◽  
...  
Keyword(s):  
Indium Oxide ◽  
Defect Structure

A novel heterostructure coupling MOF-derived fluffy porous indium oxide with g-C3N4 for enhanced photocatalytic activity

2021 ◽  
Vol 133 ◽  
pp. 111078 ◽  
Author(s):  
Xing Liu ◽  
Lu Zhang ◽  
Yudong Li ◽  
Xianzhu Xu ◽  
Yunchen Du ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Indium Oxide

Field-stepwise-swept QCPMG solid-state 115In NMR of indium oxide

2020 ◽  
Vol 109 ◽  
pp. 101688
Author(s):  
Kazuhiko Yamada ◽  
Takumi Yamaguchi ◽  
Ryutaro Ohashi ◽  
Shinobu Ohki ◽  
Kenzo Deguchi ◽  
...  
Keyword(s):  
Solid State ◽  
Indium Oxide

scholarly journals UV Nanoimprint Lithography: Geometrical Impact on Filling Properties of Nanoscale Patterns

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 822
Author(s):  
Christine Thanner ◽  
Martin Eibelhuber
Keyword(s):  
Layer Thickness ◽  
Process Parameters ◽  
Nanoimprint Lithography ◽  
Failure Modes ◽  
Production Method ◽  
Efficient Production ◽  
Comprehensive Overview ◽  
Replication Method ◽  
Wide Range ◽  
Pattern Size

Ultraviolet (UV) Nanoimprint Lithography (NIL) is a replication method that is well known for its capability to address a wide range of pattern sizes and shapes. It has proven to be an efficient production method for patterning resist layers with features ranging from a few hundred micrometers and down to the nanometer range. Best results can be achieved if the fundamental behavior of the imprint resist and the pattern filling are considered by the equipment and process parameters. In particular, the material properties and pattern size and shape play a crucial role. For capillary force-driven filling behavior it is important to understand the influencing parameters and respective failure modes in order to optimize the processes for reliable full wafer manufacturing. In this work, the nanoimprint results obtained for different pattern geometries are compared with respect to pattern quality and residual layer thickness: The comprehensive overview of the relevant process parameters is helpful for setting up NIL processes for different nanostructures with minimum layer thickness.

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