A tricolour photodetecting memory device based on lead sulfide colloidal quantum dots floating gate

2019 ◽  
Vol 75 ◽  
pp. 105111 ◽  
Author(s):  
Wen Li ◽  
Peng Zhang ◽  
Huanqun Li ◽  
Xuexi Sheng ◽  
Yu Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Lead Sulfide ◽  
Memory Device ◽  
Floating Gate ◽  
Colloidal Quantum Dots

A New Approach to the Synthesis of Lead Sulfide Colloidal Quantum Dots in a Mixture of Oleylamine and Oleic Acid

2020 ◽  
Vol 54 (3) ◽  
pp. 183-188
Author(s):  
I. A. Shuklov ◽  
V. F. Toknova ◽  
D. V. Demkin ◽  
G. I. Lapushkin ◽  
L. M. Nikolenko ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Oleic Acid ◽  
Lead Sulfide ◽  
Colloidal Quantum Dots ◽  
New Approach

Indium Gallium Arsenide Based Non-Volatile Memory Devices with Site-Specific Self-Assembled Germanium Quantum Dot Gate

2010 ◽  
Vol 1250 ◽  
Author(s):  
Pik-Yiu Chan ◽  
Mukesh Gogna ◽  
Ernesto Suarez ◽  
Fuad Alamoody ◽  
Supriya Karmakar ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Gallium Arsenide ◽  
Indium Gallium Arsenide ◽  
Field Effect Transistors ◽  
Memory Device ◽  
Floating Gate ◽  
Gate Insulator ◽  
Non Volatile Memory ◽  
Indium Gallium ◽  
Volatile Memory

AbstractThis paper presents the implementation of indium gallium arsenide field-effect transistors (InGaAs FETs) as non-volatile memory using lattice-matched II-VI gate insulator and quantum dots of GeOx-cladded Ge as the floating gate. Studies have been done to show the ability of II-VI materials to act as a tunneling gate material for InGaAs based FETs, and GeOx-cladded Ge quantum dots having the ability to store charges in the floating gate of a memory device. Proposed structure of the InGaAs device is presented.

Multi-Bit Quantum Dot Nonvolatile Memory (QDNVM) Using Cladded Germanium and Silicon Quantum Dots

2015 ◽  
Vol 24 (03n04) ◽  
pp. 1550003 ◽  
Author(s):  
Murali Lingalugari ◽  
Pik-Yiu Chan ◽  
Evan Heller ◽  
Faquir Jain
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Nonvolatile Memory ◽  
Complementary Metal Oxide Semiconductor ◽  
Memory Device ◽  
Floating Gate ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Device Structure ◽  
Nonvolatile Memory Device

In this paper, we are experimentally demonstrating the multi-bit storage of a nonvolatile memory device with cladded quantum dots as the floating gate. These quantum dot nonvolatile memory (QDNVM) devices were fabricated by using standard complementary metal-oxide-semiconductor (CMOS) process. The quantum dots in the floating gate region assembled using site-specific selfassembly (SSA) technique. Quantum mechanical simulations of this device structure are also presented. The experimental results show that the voltage separation between the bits was 0.15V and the voltage pulses required to write these bits were 11.7V and 30V. These devices demonstrated the larger write voltage separation between the bits.

Carrier Relaxation Dynamics in Lead Sulfide Colloidal Quantum Dots

2008 ◽  
Vol 112 (10) ◽  
pp. 2757-2760 ◽  
Author(s):  
Emanuel Istrate ◽  
Sjoerd Hoogland ◽  
Vlad Sukhovatkin ◽  
Larissa Levina ◽  
Stefan Myrskog ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Lead Sulfide ◽  
Colloidal Quantum Dots ◽  
Relaxation Dynamics ◽  
Carrier Relaxation ◽  
Carrier Relaxation Dynamics

scholarly journals Модифицированный метод z-сканирования для определения нелинейности третьего порядка для квантовых точек в режиме резонансного возбуждения

2019 ◽  
Vol 126 (2) ◽  
pp. 208
Author(s):  
Е.А. Пономарева ◽  
И.Д. Скурлов ◽  
С.Э. Путилин ◽  
А.Н. Цыпкин ◽  
А.П. Литвин
Keyword(s):  
Quantum Dots ◽  
Refractive Index ◽  
Lead Sulfide ◽  
Nonlinear Refractive Index ◽  
Thermal Effects ◽  
Colloidal Quantum Dots ◽  
Strong Light ◽  
Excitation Mode ◽  
Near Ir ◽  
Lead Sulfide Quantum Dots

AbstractA modified Z-scan method for determining the nonlinear refractive index of colloidal quantum dots in the near-IR spectral range in the resonant excitation mode is proposed. It is demonstrated that the thermal effects related to heating of the solution due to strong light absorption can be mitigated by reducing the probing pulse repetition rate. The nonlinear refractive index of colloidal lead sulfide quantum dots is found to be on the order of 10^–16 cm^2/W.

Realizing solution-processed monolithic PbS QDs/perovskite tandem solar cells with high UV stability

2018 ◽  
Vol 6 (48) ◽  
pp. 24693-24701 ◽  
Author(s):  
Yannan Zhang ◽  
Mengfan Gu ◽  
Ning Li ◽  
Yalong Xu ◽  
Xufeng Ling ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Absorption ◽  
Lead Sulfide ◽  
Visible Region ◽  
Colloidal Quantum Dots ◽  
Solution Processed ◽  
Tandem Solar Cells ◽  
Tandem Cell ◽  
Tunable Bandgap ◽  
Photovoltaic Materials

Among solution-processed photovoltaic materials, lead sulfide (PbS) colloidal quantum dots (QDs) possess a highly tunable bandgap and strong infrared absorption, while perovskites show extraordinary external quantum efficiency (EQE) in the visible region, which offers the opportunity to construct an ideal tandem cell of PbS QDs/perovskite.

scholarly journals Ligand Shell Structure in Lead Sulfide–Oleic Acid Colloidal Quantum Dots Revealed by Small-Angle Scattering

2019 ◽  
Vol 10 (16) ◽  
pp. 4713-4719 ◽  
Author(s):  
Michael P. Weir ◽  
Daniel T. W. Toolan ◽  
Rachel C. Kilbride ◽  
Nicholas J. W. Penfold ◽  
Adam L. Washington ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Oleic Acid ◽  
Lead Sulfide ◽  
Small Angle ◽  
Shell Structure ◽  
Small Angle Scattering ◽  
Colloidal Quantum Dots ◽  
Ligand Shell ◽  
Angle Scattering
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