Inorganic perovskite light emitting diodes with ZnO as the electron transport layer by direct atomic layer deposition

2018 ◽  
Vol 57 ◽  
pp. 60-67 ◽  
Author(s):  
Wei Li ◽  
Yun-Xiao Xu ◽  
Dong Wang ◽  
Fei Chen ◽  
Zhi-Kuan Chen
Keyword(s):  
Electron Transport ◽  
Atomic Layer Deposition ◽  
Light Emitting Diodes ◽  
Atomic Layer ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Inorganic Perovskite ◽  
Layer Deposition

scholarly journals Tantalum-Doped TiO2 Prepared by Atomic Layer Deposition and Its Application in Perovskite Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1504
Author(s):  
Chia-Hsun Hsu ◽  
Ka-Te Chen ◽  
Ling-Yan Lin ◽  
Wan-Yu Wu ◽  
Lu-Sheng Liang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Atomic Layer Deposition ◽  
Perovskite Solar Cells ◽  
Atomic Layer ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Doped Tio2 ◽  
Metal Precursors ◽  
Layer Deposition

Tantalum (Ta)-doped titanium oxide (TiO2) thin films are grown by plasma enhanced atomic layer deposition (PEALD), and used as both an electron transport layer and hole blocking compact layer of perovskite solar cells. The metal precursors of tantalum ethoxide and titanium isopropoxide are simultaneously injected into the deposition chamber. The Ta content is controlled by the temperature of the metal precursors. The experimental results show that the Ta incorporation introduces oxygen vacancies defects, accompanied by the reduced crystallinity and optical band gap. The PEALD Ta-doped films show a resistivity three orders of magnitude lower than undoped TiO2, even at a low Ta content (0.8–0.95 at.%). The ultraviolet photoelectron spectroscopy spectra reveal that Ta incorporation leads to a down shift of valance band and conduction positions, and this is helpful for the applications involving band alignment engineering. Finally, the perovskite solar cell with Ta-doped TiO2 electron transport layer demonstrates significantly improved fill factor and conversion efficiency as compared to that with the undoped TiO2 layer.

scholarly journals Efficient perovskite light-emitting diodes based on a solution-processed tin dioxide electron transport layer

2018 ◽  
Vol 6 (26) ◽  
pp. 6996-7002 ◽  
Author(s):  
Heyong Wang ◽  
Hongling Yu ◽  
Weidong Xu ◽  
Zhongcheng Yuan ◽  
Zhibo Yan ◽  
...  
Keyword(s):  
Electron Transport ◽  
Tin Dioxide ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Solution Processed ◽  
Light Emitting

Solution-processed tin dioxide is employed as an electron transport layer in n–i–p-structured perovskite light-emitting diodes realizing an EQE of 7.9%.

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