Organic field-effect transistors as high performance humidity sensors with rapid response, recovery time and remarkable ambient stability

2016 ◽  
Vol 32 ◽  
pp. 169-178 ◽  
Author(s):  
Nimmakayala V.V. Subbarao ◽  
Murali Gedda ◽  
Parameswar Krishnan Iyer ◽  
Dipak Kumar Goswami
Keyword(s):  
Recovery Time ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Rapid Response ◽  
Organic Field Effect Transistors ◽  
Humidity Sensors ◽  
Response Recovery

Organic Field-Effect Transistors with Macroporous Semiconductor Films as High-Performance Humidity Sensors

2017 ◽  
Vol 9 (17) ◽  
pp. 14974-14982 ◽  
Author(s):  
Shaohua Wu ◽  
Guiheng Wang ◽  
Zhan Xue ◽  
Feng Ge ◽  
Guobing Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Semiconductor Films ◽  
Organic Field Effect Transistors ◽  
Humidity Sensors

High performance solution-processable tetrathienoacene (TTAR) based small molecules for organic field effect transistors (OFETs)

2017 ◽  
Vol 53 (43) ◽  
pp. 5898-5901 ◽  
Author(s):  
Sureshraju Vegiraju ◽  
Deng-Yi Huang ◽  
Pragya Priyanka ◽  
Yo-Shan Li ◽  
Xian-Lun Luo ◽  
...  
Keyword(s):  
Small Molecules ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processable

DDTT-TTARexhibits the highest mobility of 0.81 cm2V−1s−1.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

Indigo - From Jeans to Semiconductors: Indigo - A Natural Pigment for High Performance Ambipolar Organic Field Effect Transistors and Circuits (Adv. Mater. 3/2012)

2012 ◽  
Vol 24 (3) ◽  
pp. 321-321 ◽  
Author(s):  
Mihai Irimia-Vladu ◽  
Eric D. Głowacki ◽  
Pavel A. Troshin ◽  
Günther Schwabegger ◽  
Lucia Leonat ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Natural Pigment

scholarly journals High-Performance Organic Field-Effect Transistors with Ionic Liquids

Hyomen Kagaku ◽  
2013 ◽  
Vol 34 (4) ◽  
pp. 204-209
Author(s):  
Shimpei ONO ◽  
Tomo SAKANOUE ◽  
Shiro SEKI
Keyword(s):  
Ionic Liquids ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

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