Growth and characterization of large size ADP single crystals and the effect of glycine on their growth and properties

2015 ◽  
Vol 42 ◽  
pp. 87-93 ◽  
Author(s):  
P. Rajesh ◽  
P. Ramasamy
Keyword(s):  
1999 ◽  
Vol 197 (4) ◽  
pp. 865-873 ◽  
Author(s):  
R.V Anantha Murthy ◽  
M Ravikumar ◽  
A Choubey ◽  
Krishan Lal ◽  
Lyudmila Kharachenko ◽  
...  

1970 ◽  
Vol 33 (1) ◽  
pp. 47-54 ◽  
Author(s):  
S Ferdous ◽  
J Podder

Highly transparent and well faceted large size epsomite single crystals have been grown in pure form and doped with KCl from aqueous solutions by slow cooling and isothermal evaporation method. The optical quality of the epsomite improves on doping by KCl. Mass growth rates were found to increase with doping of lower concentrations of KCl and then decreases with the higher concentration of KCl. KCl doped epsomite crystal reveals that structures are slightly distorted due to adsorption of Cl- ion into the crystal lattice. DC conductivity along the growth axis for all of the grown crystals increases with temperature in the range of 25 to 70ºC and also increases with the KCl concentration. Dielectric constant is found to be almost independent of frequency up to range of 106Hz. The dielectric studies show the suitability of these grown crystals for optoelectronic applications. DOI: 10.3329/jbas.v33i1.2949 Journal of Bangladesh Academy of Sciences, Vol. 33, No. 1, 47-54, 2009


2006 ◽  
Vol 32 (3) ◽  
pp. 321-323 ◽  
Author(s):  
Xianjun Wu ◽  
Jiayue Xu ◽  
Guoxin Qian ◽  
Weiqing Jin

Author(s):  
Vinh Trung Phan ◽  
Anh Thi Quynh Le ◽  
Dat Thanh Huynh

Pure KDP single crystals were studied extensively since the 1930s because they could be grown easily to reach a large size, of their low cost and piezoelectric property. Since then, many applications of the KDP crystal have been developed such as the electro-optic modulation, the optical switch (Q-Switch) and the frequency of laser converter through the second-, thirdorder nonlinear effects. In response to these applications, the high-quality KDP single crystals are required. The common method of growing KDP crystal is the temperature lowering, in which a KDP seed is placed in a supersaturated solution. The disadvantage of this method is the spontaneous appearance of crystalline clusters at the bottom of the container which retard the growth of the main crystal. Since the 2010s, Sankaranarayanan and Ramasamy have proposed a new method of growing crystal by designing the Y-shaped solution container. In this study, the KDP single crystals were grown by the SR method. These crystals have better quality, fewer defects, higher hardness and density, and especially material saving compared to the ones prepared by the traditional methods.


ChemInform ◽  
1988 ◽  
Vol 19 (23) ◽  
Author(s):  
E. M. MONBERG ◽  
W. A. GAULT ◽  
F. DOMINGUEZ ◽  
F. SIMCHOCK ◽  
S. N. G. CHU ◽  
...  

1988 ◽  
Vol 135 (2) ◽  
pp. 500-503 ◽  
Author(s):  
E. M. Monberg ◽  
W. A. Gault ◽  
F. Dominguez ◽  
F. Simchock ◽  
S. N. G. Chu ◽  
...  

2015 ◽  
Vol 30 (8) ◽  
pp. 887 ◽  
Author(s):  
HUANG Chang-Bao ◽  
NI You-Bao ◽  
WU Hai-Xin ◽  
WANG Zhen-You ◽  
XIAO Rui-Chun ◽  
...  
Keyword(s):  

Optik ◽  
2014 ◽  
Vol 125 (12) ◽  
pp. 2912-2917 ◽  
Author(s):  
R. Gandhimathi ◽  
R. Dhanasekaran
Keyword(s):  

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 235
Author(s):  
Shuqi Zhao ◽  
Tongtong Yu ◽  
Ziming Wang ◽  
Shilei Wang ◽  
Limei Wei ◽  
...  

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.


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