Porous silica xerogel films as antireflective coatings – Fabrication and characterization

2011 ◽  
Vol 33 (12) ◽  
pp. 1989-1994 ◽  
Author(s):  
Paweł Karasiński ◽  
Janusz Jaglarz ◽  
Manuela Reben ◽  
Edyta Skoczek ◽  
Jacek Mazur
1998 ◽  
Vol 511 ◽  
Author(s):  
S. Nitta ◽  
A. Jain ◽  
V. Pisupatti ◽  
W. N. Gill ◽  
P. C. Wayner ◽  
...  

ABSTRACTXerogel films of high porosity were fabricated using an ambient pressure technique. The same porosity can be obtained with different microstructures by varying the aging time of the films. The dielectric constant of these films as a function of porosity at 1 MHz follows correlations originally developed for bulk aerogels. Diffusion of copper is orders of magnitude faster in these xerogels than in the corresponding thermal oxide. An activation energy of 0.9 eV was estimated based on a convective diffusion model.


1996 ◽  
Vol 443 ◽  
Author(s):  
Changming Jin ◽  
Scott List ◽  
Stacey Yamanaka ◽  
Wei William Lee ◽  
Kelly Taylor ◽  
...  

AbstractThe continued scaling of device feature size demands the use of low permittivity intermetal dielectric materials. Porous silica xerogel films have low dielectric permittivity through the incorporation of micropores into the SiO2 network. A feasible xerogel process has been developed. Crack-free and uniform silica xerogel films up to two microns in thickness with targeted porosity were readily coated. Xerogel materials completely filled 0.3 μm wide gaps with a 2:1 aspect ratio. MOSCAP measurements revealed a low permittivity and high dielectric breakdown strength. The dielectric breakdown strength is expected to be higher than that of ambient air because the average pore size of in the xerogel film is much smaller than the mean free path of the ambient air. Surface treated xerogel films were found to be hydrophobic as indicated by the absence of adsorbed moisture peaks in FTIR spectra. Xerogel films maintained their porosity after deposition of dense capping layers and a subsequent process under 700 atm Ar pressure at 400 °C. Test structures containing xerogel were successfully planarization with CMP and went through a tungsten plug deposition process without delamination nor collapsing. These results reflect the reasonable mechanical strength of xerogel films.


2009 ◽  
Vol 29 (6) ◽  
pp. 1719-1723 ◽  
Author(s):  
张清华 Zhang Qinghua ◽  
杨伟 Yang Wei ◽  
马红菊 Ma Hongju ◽  
马平 Ma Ping ◽  
许乔 Xu Qiao

2007 ◽  
Vol 111 (23) ◽  
pp. 8291-8298 ◽  
Author(s):  
Abhilash Vincent ◽  
Suresh Babu ◽  
Erik Brinley ◽  
Ajay Karakoti ◽  
Sameer Deshpande ◽  
...  

1999 ◽  
Vol 565 ◽  
Author(s):  
Anurag Jain ◽  
Svetlana Rogojevic ◽  
Satya V. Nitta ◽  
Venumadhav Pisupatti ◽  
William N. Gill ◽  
...  

AbstractSurface modified silica xerogel films of high porosity (60 - 90 %) and uniform thickness (0.4–2 μm) were fabricated at ambient pressure on silicon and silicon dioxide. The rheological properties that govern film uniformity were determined. A relation between the final dried film thickness and spin speed was developed. The porosity and thickness of the films could be controlled independently. The same porosity could be obtained over a wide range of aging time and temperature combinations. Fracture toughness was measured using the edge-lift-off technique. The best values were comparable to concrete. Surface modification was affected by treating the film with trimethylcholorosilane (TMCS) and other modifiers. Moisture adsorption was studied at 100% RH using a quartz crystal microbalance technique. Depending upon the degree and kind of surface treatment, films absorbed as much as 32% or as little as 2% of their weight in water. Dielectric constants (K), losses and breakdown strengths were comparable to values for calcined, bulk aerogels. Thin (≤ 500 Å) films of Copper (Cu) and Tantalum (Ta) were deposited on xerogel films and subjected to thermal annealing. No diffusion was observed within the limits of RBS. High-density plasma etching showed that the films etch an order of magnitude faster than conventional SiO2 films.


2010 ◽  
Vol 149 (1) ◽  
pp. 122-128 ◽  
Author(s):  
Juncal Estella ◽  
Pablo de Vicente ◽  
Jesús C. Echeverría ◽  
Julián J. Garrido

2001 ◽  
Vol 90 (11) ◽  
pp. 5832-5834 ◽  
Author(s):  
Anurag Jain ◽  
Svetlana Rogojevic ◽  
William N. Gill ◽  
Joel L. Plawsky ◽  
Itty Matthew ◽  
...  

1997 ◽  
Vol 308-309 ◽  
pp. 495-500 ◽  
Author(s):  
Jung-Kyun Hong ◽  
Hee-Sun Yang ◽  
Moon-Ho Jo ◽  
Hyung-Ho Park ◽  
Se-Young Choi

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