Very low amplified spontaneous emission threshold and electroluminescence characteristics of 1,1′-diphenyl substituted fluorene derivatives

2007 ◽  
Vol 30 (4) ◽  
pp. 630-636 ◽  
Author(s):  
Hajime Nakanotani ◽  
Naoki Matsumoto ◽  
Hiroyuki Uchiuzou ◽  
Masakazu Nishiyama ◽  
Masayuki Yahiro ◽  
...  
Keyword(s):  
Spontaneous Emission ◽  
Amplified Spontaneous Emission ◽  
Emission Threshold

Factors Limiting the Amplified Spontaneous Emission Threshold of Quasi-2D Perovskite Gain Materials

2021 ◽  
Author(s):  
Yang Li ◽  
Isabel Allegro ◽  
Milian Kaiser ◽  
Aditya Malla ◽  
Bryce Richards ◽  
...  
Keyword(s):  
Spontaneous Emission ◽  
Amplified Spontaneous Emission ◽  
Emission Threshold

scholarly journals Low Amplified Spontaneous Emission Threshold from Organic Dyes Based on Bis‐stilbene

2018 ◽  
Vol 28 (32) ◽  
pp. 1802130 ◽  
Author(s):  
Masashi Mamada ◽  
Toshiya Fukunaga ◽  
Fatima Bencheikh ◽  
Atula S. D. Sandanayaka ◽  
Chihaya Adachi
Keyword(s):  
Spontaneous Emission ◽  
Organic Dyes ◽  
Amplified Spontaneous Emission ◽  
Emission Threshold

Dependence of the Amplified Spontaneous Emission Threshold in Spirofluorene Thin Films on Molecular Orientation

2011 ◽  
Vol 115 (40) ◽  
pp. 19890-19896 ◽  
Author(s):  
Takeshi Komino ◽  
Hiroko Nomura ◽  
Masayuki Yahiro ◽  
Kuniaki Endo ◽  
Chihaya Adachi
Keyword(s):  
Thin Films ◽  
Spontaneous Emission ◽  
Molecular Orientation ◽  
Amplified Spontaneous Emission ◽  
Emission Threshold

A high-mobility, high-luminescence and low-threshold pentacene-doped cyano-substituted distyrylbenzene crystal

2019 ◽  
Vol 7 (43) ◽  
pp. 13447-13453
Author(s):  
Yang Zhao ◽  
Liyan Wang ◽  
Xi Chen ◽  
Biao Zhang ◽  
Fangzhong Shen ◽  
...  
Keyword(s):  
Spontaneous Emission ◽  
Carrier Mobility ◽  
High Mobility ◽  
Amplified Spontaneous Emission ◽  
Luminescence Efficiency ◽  
Low Threshold ◽  
Emission Threshold

A 2-CSB⊂Pc crystal showed a carrier mobility of 0.51 cm2 V−1 s−1, luminescence efficiency of 50%, and an amplified spontaneous emission threshold of 46 kW cm−2.

scholarly journals Reducing Amplified Spontaneous Emission Threshold in CsPbBr3 Quantum Dot Films by Controlling TiO2 Compact Layer

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1605 ◽  
Author(s):  
Saif M. H. Qaid ◽  
Fahhad H. Alharbi ◽  
Idriss Bedja ◽  
Mohammad Khaja Nazeeruddin ◽  
Abdullah S. Aldwayyan
Keyword(s):  
Quantum Dot ◽  
Spontaneous Emission ◽  
Precursor Solution ◽  
Atomic Layer ◽  
Amplified Spontaneous Emission ◽  
High Quality ◽  
Compact Layer ◽  
Layer Deposition ◽  
Growth Method ◽  
Emission Threshold

Amplified spontaneous emission (ASE) threshold in CsPbBr3 quantum dot films is systematically reduced by introducing high quality TiO2 compact layer grown by atomic-layer deposition. Uniform and pinhole-free TiO2 films of thickness 10, 20 and 50 nm are used as a substrates for CsPbBr3 quantum dot films to enhance amplified spontaneous emission performance. The reduction is attributed indirectly to the improved morphology of TiO2 compact layer and subsequently CsPbBr3 active layer as grown on better quality substrates. This is quantified by the reduced roughness of the obtained films to less than 5 nm with 50 nm TiO2 substrate. Considering the used growth method for the quantum dot film, the improved substrate morphology maintains better the structure of the used quantum dots in the precursor solution. This results in better absorption and hence lower threshold of ASE. Besides that, the improved film quality results further in reducing light scattering and hence additional slight optical enhancement. The work demonstrates a potential venue to reduce the amplified spontaneous emission threshold of quantum dot films and therefore enhanced their optical performance.

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