scholarly journals Ultra-broadband wide-angle terahertz absorber realized by a doped silicon metamaterial

2020 ◽  
Vol 471 ◽  
pp. 125835 ◽  
Author(s):  
Mingwei Jiang ◽  
Zhengyong Song ◽  
Qing Huo Liu
Keyword(s):  
Wide Angle ◽  
Terahertz Absorber ◽  
Doped Silicon

A dynamically tunable and wide-angle terahertz absorber based on graphene-dielectric grating

2020 ◽  
Vol 34 (27) ◽  
pp. 2050292
Author(s):  
Chunyan Wu ◽  
Yiqiang Fang ◽  
Linbao Luo ◽  
Kai Guo ◽  
Zhongyi Guo
Keyword(s):  
Chemical Potential ◽  
Incident Angle ◽  
Near Field ◽  
Absorption Efficiency ◽  
Multilayer Graphene ◽  
Wide Angle ◽  
Terahertz Absorber ◽  
Tunable Range ◽  
Magnetic Components ◽  
Dielectric Grating

We theoretically and numerically demonstrate a tunable and wide-angle terahertz absorber, which is composed of multilayer graphene-dielectric grating and bottom metal substrate. Numerical simulation shows that the proposed absorber has the advantage of dynamically tunable range from 1.015 THz to 1.165 THz when the chemical potential of graphene increases from 10 meV to 150 meV. The absorption efficiency can reach a high value of 99%. To show the working mechanism of absorption, the near field distributions of magnetic components are presented at the absorption wavelength. We also demonstrate that the tunable range of absorption can be engineered by designing the geometry parameters. In addition, it is shown that the designed absorber can maintain the good performance of absorption over a wide incident angle from [Formula: see text] to [Formula: see text] under TM-polarization.

scholarly journals A high-performance broadband terahertz absorber based on sawtooth-shape doped-silicon

AIP Advances ◽  
2016 ◽  
Vol 6 (5) ◽  
pp. 055112 ◽  
Author(s):  
Liang-Hui Du ◽  
Jiang Li ◽  
Zhao-Hui Zhai ◽  
Kun Meng ◽  
Qiao Liu ◽  
...  
Keyword(s):  
High Performance ◽  
Terahertz Absorber ◽  
Doped Silicon ◽  
Broadband Terahertz

Broadband, wide-angle and tunable terahertz absorber based on cross-shaped graphene arrays

2017 ◽  
Vol 56 (19) ◽  
pp. 5458 ◽  
Author(s):  
Binggang Xiao ◽  
Mingyue Gu ◽  
Sanshui Xiao
Keyword(s):  
Wide Angle ◽  
Terahertz Absorber

CBED Shadow Images and Cs:Aberration Measurement

1982 ◽  
Vol 40 ◽  
pp. 696-697
Author(s):  
R. W. Carpenter ◽  
I.Y.T. Chan ◽  
J. M. Cowley
Keyword(s):  
Focal Point ◽  
Spherical Aberration ◽  
Optic Axis ◽  
Wide Angle ◽  
Caustic Surface ◽  
Convergent Beam

Wide-angle convergent beam shadow images(CBSI) exhibit several characteristic distortions resulting from spherical aberration. The most prominent is a circle of infinite magnification resulting from rays having equal values of a forming a cross-over on the optic axis at some distance before reaching the paraxial focal point. This distortion is called the tangential circle of infinite magnification; it can be used to align and stigmate a STEM and to determine Cs for the probe forming lens. A second distortion, the radial circle of infinite magnification, results from a cross-over on the lens caustic surface of rays with differing values of ∝a, also before the paraxial focal point of the lens.

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

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