All-optical image-reject frequency down-conversion based on cascaded electro-optical modulators

2019 ◽  
Vol 430 ◽  
pp. 158-162 ◽  
Author(s):  
Zhaoyang Tu ◽  
Aijun Wen ◽  
Wu Zhang ◽  
Zhongguo Xiu ◽  
Guocong Yu
Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2351-2359
Author(s):  
Hao Ouyang ◽  
Haitao Chen ◽  
Yuxiang Tang ◽  
Jun Zhang ◽  
Chenxi Zhang ◽  
...  

AbstractStrong quantum confinement and coulomb interactions induce tightly bound quasiparticles such as excitons and trions in an atomically thin layer of transitional metal dichalcogenides (TMDs), which play a dominant role in determining their intriguing optoelectronic properties. Thus, controlling the excitonic properties is essential for the applications of TMD-based devices. Here, we demonstrate the all-optical tuning of the local excitonic emission from a monolayer MoS2 hybridized with phase-change material Ge2Sb2Te5 (GST) thin film. By applying pulsed laser with different power on the MoS2/GST heterostructure, the peak energies of the excitonic emission of MoS2 can be tuned up to 40 meV, and the exciton/trion intensity ratio can be tuned by at least one order of magnitude. Raman spectra and transient pump-probe measurements show that the tunability originated from the laser-induced phase change of the GST thin film with charge transferring from GST to the monolayer MoS2. The dynamic tuning of the excitonic emission was all done with localized laser pulses and could be scaled readily, which pave a new way of controlling the excitonic emission in TMDs. Our findings could be potentially used as all-optical modulators or switches in future optical networks.


1999 ◽  
Vol 38 (Part 2, No. 4A) ◽  
pp. L390-L392 ◽  
Author(s):  
Jinhai Si ◽  
Kenji Kitaoka ◽  
Tsuneo Mitsuyu ◽  
Kazuyuki Hirao

Micromachines ◽  
2022 ◽  
Vol 13 (1) ◽  
pp. 92
Author(s):  
Hongyan Yang ◽  
Yunzheng Wang ◽  
Zian Cheak Tiu ◽  
Sin Jin Tan ◽  
Libo Yuan ◽  
...  

In the advancement of photonics technologies, all-optical systems are highly demanded in ultrafast photonics, signal processing, optical sensing and optical communication systems. All-optical devices are the core elements to realize the next generation of photonics integration system and optical interconnection. Thus, the exploration of new optoelectronics materials that exhibit different optical properties is a highlighted research direction. The emerging two-dimensional (2D) materials such as graphene, black phosphorus (BP), transition metal dichalcogenides (TMDs) and MXene have proved great potential in the evolution of photonics technologies. The optical properties of 2D materials comprising the energy bandgap, third-order nonlinearity, nonlinear absorption and thermo-optics coefficient can be tailored for different optical applications. Over the past decade, the explorations of 2D materials in photonics applications have extended to all-optical modulators, all-optical switches, an all-optical wavelength converter, covering the visible, near-infrared and Terahertz wavelength range. Herein, we review different types of 2D materials, their fabrication processes and optical properties. In addition, we also summarize the recent advances of all-optical modulation based on 2D materials. Finally, we conclude on the perspectives on and challenges of the future development of the 2D material-based all-optical devices.


Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Feiying Sun ◽  
Changbin Nie ◽  
Xingzhan Wei ◽  
Hu Mao ◽  
Yupeng Zhang ◽  
...  

Abstract Two-dimensional (2D) materials with excellent optical properties and complementary metal-oxide-semiconductor (CMOS) compatibility have promising application prospects for developing highly efficient, small-scale all-optical modulators. However, due to the weak nonlinear light-material interaction, high power density and large contact area are usually required, resulting in low light modulation efficiency. In addition, the use of such large-band-gap materials limits the modulation wavelength. In this study, we propose an all-optical modulator integrated Si waveguide and single-layer MoS2 with a plasmonic nanoslit, wherein modulation and signal light beams are converted into plasmon through nanoslit confinement and together are strongly coupled to 2D MoS2. This enables MoS2 to absorb signal light with photon energies less than the bandgap, thereby achieving high-efficiency amplitude modulation at 1550 nm. As a result, the modulation efficiency of the device is up to 0.41 dB μm−1, and the effective size is only 9.7 µm. Compared with other 2D material-based all-optical modulators, this fabricated device exhibits excellent light modulation efficiency with a micron-level size, which is potential in small-scale optical modulators and chip-integration applications. Moreover, the MoS2-plasmonic nanoslit modulator also provides an opportunity for TMDs in the application of infrared optoelectronics.


1992 ◽  
Vol 17 (8) ◽  
pp. 613 ◽  
Author(s):  
Eung Gi Paek ◽  
C. E. Zah ◽  
K. W. Cheung ◽  
L. Curtis

2020 ◽  
Vol 8 (7) ◽  
pp. 1140
Author(s):  
Qing Wu ◽  
Yunzheng Wang ◽  
Weichun Huang ◽  
Cong Wang ◽  
Zheng Zheng ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document