Relaxation times and symmetries in the nonlinear optical properties of a two-level system

2017 ◽  
Vol 405 ◽  
pp. 238-243 ◽  
Author(s):  
J.L. Paz ◽  
J.R. León-Torres ◽  
Luis Lascano ◽  
César Costa Vera
Keyword(s):  
Optical Properties ◽  
Nonlinear Optical ◽  
Relaxation Times ◽  
Nonlinear Optical Properties ◽  
Level System

Four-wave mixing signal intensity: Relaxation time effects on the absorptive and dispersive optical properties in a two-level system

2015 ◽  
Vol 24 (02) ◽  
pp. 1550023
Author(s):  
J. L. Paz ◽  
Luis G. Rodríguez ◽  
Cesar Costa-Vera
Keyword(s):  
Optical Properties ◽  
Nonlinear Optical ◽  
Dipole Moments ◽  
Relaxation Times ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Level System ◽  
Time Effects ◽  
Frequency Space ◽  
Signal Response

A study of the effects of relaxation times on the Four-Wave Mixing (FWM) signal response in frequency space for a two-level system is presented where the collisional effects of the solvent and the presence of the electromagnetic field are considered. The model is a generalization of the conventional two-level approach in that it includes a simplified description of the molecular structure associated with the non-zero permanent dipole moments. Significant changes in both the FWM-intensity and nonlinear optical properties are observed, due mainly to changes in the ratio between the longitudinal and transversal relaxation times.

Non-Linear Optical Response of Metallic and Emiconducting Nanocrystals in Fused Silica

1996 ◽  
Vol 438 ◽  
Author(s):  
R. G. Elliman ◽  
B. Luther-Davies ◽  
M. Samoc ◽  
A. Dowd
Keyword(s):  
Optical Properties ◽  
Nonlinear Optical ◽  
Response Times ◽  
Relaxation Times ◽  
Optical Response ◽  
Fused Silica ◽  
Nonlinear Optical Properties ◽  
Fast Relaxation ◽  
Non Linear ◽  
Linear And Nonlinear

AbstractThe linear and nonlinear optical properties of Ge-implanted fused-silica were examined and compared with Au- and Si-implanted samples. Samples as-implanted with 1.0 MeV Ge ions to a fluence of 3x1017 Ge.cm-2 exhibited relatively large non-linearities, |n2| ≤5x10-12 cm2/W, and fast relaxation times, ∼lps. In contrast, samples implanted with comparable fluences of Au ions exhibited smaller non-linearities, |n2| ∼1x10-13 cm2/W, and slower response times, ≥ 10ps. The non-linearity for Ge was much larger than that for samples as-implanted with Si.

MAGNETIC FIELD, PRESSURE AND TEMPERATURE DEPENDENT OPTICAL PROPERTIES IN A GaAs 9.0 P 1.0 QUANTUM DOT

2014 ◽  
Vol 6 (2) ◽  
pp. 1178-1190
Author(s):  
A. JOHN PETER ◽  
Ada Vinolin
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Quantum Dot ◽  
Field Strength ◽  
Magnetic Field Strength ◽  
Photon Energy ◽  
Nonlinear Optical ◽  
Binding Energies ◽  
Nonlinear Optical Properties ◽  
Optical Rectification

Simultaneous effects of magnetic field, pressure and temperature on the exciton binding energies are found in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot. Numerical calculations are carried out taking into consideration of spatial confinement effect. The cylindrical system is taken in the present problem with the strain effects. The electronic properties and the optical properties are found with the combined effects of magnetic field strength, hydrostatic pressure and temperature values. The exciton binding energies and the nonlinear optical properties are carried out taking into consideration of geometrical confinement and the external perturbations.Compact density approach is employed to obtain the nonlinear optical properties. The optical rectification coefficient is obtained with the photon energy in the presence of pressure, temperature and external magnetic field strength. Pressure and temperature dependence on nonlinear optical susceptibilities of generation of second and third order harmonics as a function of incident photon energy are brought out in the influence of magnetic field strength. The result shows that the electronic and nonlinear optical properties are significantly modified by the applications of external perturbations in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot.

Linear and Nonlinear Optical Properties of Small Silicon Clusters

1990 ◽  
Author(s):  
Tapio T. Rantala ◽  
Mark I. Stockman ◽  
Daniel A. Jelski ◽  
Thomas F. George
Keyword(s):  
Optical Properties ◽  
Nonlinear Optical ◽  
Nonlinear Optical Properties ◽  
Silicon Clusters ◽  
Linear And Nonlinear
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