Passive silicon photonic devices for microwave photonic signal processing

2016 ◽  
Vol 373 ◽  
pp. 44-52 ◽  
Author(s):  
Jiayang Wu ◽  
Jizong Peng ◽  
Boyu Liu ◽  
Ting Pan ◽  
Huanying Zhou ◽  
...  
2020 ◽  
Vol 39 (2) ◽  
pp. 70-96
Author(s):  
Shijie Song ◽  
Suen Xin Chew ◽  
Liwei Li ◽  
Xiaoke Yi ◽  
Linh Nguyen ◽  
...  

2021 ◽  
pp. 2000501
Author(s):  
Jorge Parra ◽  
Irene Olivares ◽  
Antoine Brimont ◽  
Pablo Sanchis

Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 329-341 ◽  
Author(s):  
Raji Shankar ◽  
Marko Lončar

AbstractThe mid-infrared (IR) wavelength region (2–20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and free-space communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform. Here, we discuss our group’s recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled high-quality factor ring resonators in a silicon-on-sapphire (SOS) platform. Since experimental characterization of microphotonic devices is especially challenging at the mid-IR, we also review our mid-IR characterization techniques in some detail. Additionally, pre- and post-processing techniques for improving device performance, such as resist reflow, Piranha clean/HF dip cycling, and annealing are discussed.


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