Hybrid integration of waveguide photodetectors with silicon-on-insulator micro-ring resonator on silicon substrate

High-Q Silicon-on-Insulator Micro-Ring Resonator with Silica Covering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.684.443 ◽

2013 ◽

Vol 684 ◽

pp. 443-446

Author(s):

Chao Liu ◽

Chen Yang Xue ◽

Dan Feng Cui ◽

Jun Bin Zang ◽

Yong Hua Wang ◽

...

Keyword(s):

Electron Beam ◽

Transmission Spectrum ◽

Electron Beam Lithography ◽

Ring Resonator ◽

Sio2 Layer ◽

Silicon On Insulator ◽

New Method ◽

Ring Resonators ◽

Q Factor ◽

High Q

We designed High-Q micro-ring resonators based on SOI material. A new method of using a top SiO2 layer to cover the waveguide is applied and the tested Q factor is as high as 1.0135×104. Micro-ring resonator has been fabricated using Electron-Beam Lithography and Inductive Coupled Plasma. OptiFDTD was used to simulate the micro-ring resonator and we compared the transmission spectrum of this resonator with the resonator without SiO2 covering.

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On chip fast FBG interrogator based on a Silicon on Insulator ring resonator add/drop filter

10.1364/ofs.2020.t3.96 ◽

2021 ◽

Author(s):

L. Tozzetti ◽

A. Giacobbe ◽

F. Di Pasquale ◽

S. Faralli

Keyword(s):

Ring Resonator ◽

Silicon On Insulator ◽

On Chip

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All-Optical Switching in Silicon-on-Insulator Serially Coupled Double-Ring Resonator Based on Thermal Nonlinear Effect

Chinese Journal of Lasers ◽

10.3788/cjl201340.0205006 ◽

2013 ◽

Vol 40 (2) ◽

pp. 0205006

Author(s):

刘毅 Liu Yi ◽

仝晓刚 Tong Xiaogang ◽

于晋龙 Yu Jinlong ◽

薛晨阳 Xue Chenyang ◽

王文睿 Wang Wenrui ◽

...

Keyword(s):

Nonlinear Effect ◽

Optical Switching ◽

Ring Resonator ◽

Silicon On Insulator ◽

Double Ring ◽

All Optical ◽

All Optical Switching

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GaInAsP/silicon-on-insulator hybrid laser with ring-resonator-type reflector fabricated by N2plasma-activated bonding

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.082701 ◽

2016 ◽

Vol 55 (8) ◽

pp. 082701 ◽

Cited By ~ 8

Author(s):

Yusuke Hayashi ◽

Junichi Suzuki ◽

Satoshi Inoue ◽

Shovon Muhammad Tanvir Hasan ◽

Yuki Kuno ◽

...

Keyword(s):

Ring Resonator ◽

Silicon On Insulator

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Narrow line-width single-longitudinal-mode fiber laser using silicon-on-insulator based micro-ring-resonator

Laser Physics Letters ◽

10.1088/1612-2011/13/2/025102 ◽

2015 ◽

Vol 13 (2) ◽

pp. 025102 ◽

Cited By ~ 4

Author(s):

Yang Liu ◽

Yung Hsu ◽

Chin-Wei Hsu ◽

Ling-Gang Yang ◽

Chi-Wai Chow ◽

...

Keyword(s):

Fiber Laser ◽

Line Width ◽

Ring Resonator ◽

Longitudinal Mode ◽

Single Longitudinal Mode ◽

Silicon On Insulator ◽

Narrow Line ◽

Narrow Line Width

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Performance of the Active Microring Resonator Based on SOI Rib Waveguide

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.462.375 ◽

2012 ◽

Vol 462 ◽

pp. 375-379

Author(s):

B. Mardiana ◽

A.R. Hanim ◽

H. Hazura ◽

S. Shaari ◽

P. Susthitha Menon ◽

...

Keyword(s):

Refractive Index ◽

Ring Resonator ◽

Refractive Index Change ◽

Electrical Signal ◽

Free Carrier ◽

Simulation Software ◽

Microring Resonator ◽

Silicon On Insulator ◽

Carrier Injection ◽

Rib Waveguide

Micro-ring resonator based on silicon-on-insulator (SOI) has been extensively studied due to its many advantages, thus promising to improve the optoelectronic integrated circuit performance. This paper highlights the study of the free carrier injection effect on the silicon rib waveguide with p-i-n diode structure integrated in the SOI micro-ring resonator. The free carrier concentrations have been modulated by the electrical signal that can cause change of refractive index of the micro-ring resonator. The device performances are predicted by using numerical modelling software 2D SILVACO and Finite Difference Time Domain method simulation software RSOFT. The results show the change of refractive index is maximized at a greater applied voltage. A shift in resonant wavelength of around 6.7 nm was predicted at 0.9V with 1.14x10-3refractive index change. It is also shown that 8.5dB change of the output response obtained through the output.

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