Effect of GaInP intermediate barrier in 1.3μm compressive-strained GaInAsP/GaInAsP multiple-quantum-wells laser diodes

2007 ◽  
Vol 273 (2) ◽  
pp. 532-537 ◽  
Author(s):  
Po-Hsun Lei
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Research on the high indium content InGaAs multiple quantum wells wafers for λ>1.55μm laser diodes

2015 ◽  
Vol 631 ◽  
pp. 283-287 ◽  
Author(s):  
Tao Lin ◽  
Hang Sun ◽  
Haoqing Zhang ◽  
Yonggang Wang ◽  
Nan Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Indium Content

X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes

1998 ◽  
Vol 72 (9) ◽  
pp. 1004-1006 ◽  
Author(s):  
D. Korakakis ◽  
K. F. Ludwig ◽  
T. D. Moustakas
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Ultraviolet Laser ◽  
X Ray

Investigation of 0.8-μm InGaAsP-GaAs laser diodes with multiple quantum wells

1995 ◽  
Author(s):  
Jacqueline E. Diaz ◽  
Hyuk J. Yi ◽  
Seongsin Kim ◽  
Matthew Erdtmann ◽  
Lewis S. Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Gaas Laser

Broadly tunable external cavity laser diodes with staggered thickness multiple quantum wells

1997 ◽  
Vol 9 (2) ◽  
pp. 155-157 ◽  
Author(s):  
H.S. Gingrich ◽  
D.R. Chumney ◽  
S.-Z. Sun ◽  
S.D. Hersee ◽  
L.F. Lester ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
External Cavity ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
External Cavity Laser ◽  
Cavity Laser

High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes

2010 ◽  
Vol 3 (8) ◽  
pp. 082001 ◽  
Author(s):  
You-Da Lin ◽  
Shuichiro Yamamoto ◽  
Chia-Yen Huang ◽  
Chia-Lin Hsiung ◽  
Feng Wu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Green Laser ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Quality

Enhanced temperature characteristic of InGaN/GaN laser diodes with uniform multiple quantum wells

2015 ◽  
Vol 30 (12) ◽  
pp. 125015 ◽  
Author(s):  
Pengyan Wen ◽  
Shuming Zhang ◽  
Deyao Li ◽  
Jianping Liu ◽  
Liqun Zhang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Temperature Characteristic ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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