Systematic considerations for the patterning of photonic crystal devices by electron beam lithography

2007 ◽  
Vol 271 (1) ◽  
pp. 241-247 ◽  
Author(s):  
Hejun Yu ◽  
Jinzhong Yu ◽  
Fei Sun ◽  
Zhiyong Li ◽  
Shaowu Chen
Keyword(s):  
Electron Beam ◽  
Photonic Crystal ◽  
Electron Beam Lithography

Design and fabrication of Si-based photonic crystal stamps with electron beam lithography (EBL)

2009 ◽  
Author(s):  
Reyhaneh Jannesary ◽  
Iris Bergmair ◽  
Saeid Zamiri ◽  
Kurt Hingerl ◽  
Graham Hubbard ◽  
...  
Keyword(s):  
Electron Beam ◽  
Photonic Crystal ◽  
Electron Beam Lithography

Design and fabrication of Si-based photonic crystal stamps with electron beam lithography (EBL)

2010 ◽  
Author(s):  
Reihaneh Jannesary ◽  
Iris Bergmair ◽  
Saeid Zamiri ◽  
Kurt Hingerl
Keyword(s):  
Electron Beam ◽  
Photonic Crystal ◽  
Electron Beam Lithography

Prototyping of three-dimensional photonic crystal structures using electron-beam lithography

2004 ◽  
Vol 846 ◽  
Author(s):  
G. Subramania ◽  
J. M. Rivera
Keyword(s):  
Electron Beam ◽  
Photonic Crystal ◽  
Electron Beam Lithography ◽  
Near Infrared ◽  
Photonic Band Gap ◽  
Three Dimensional ◽  
Photonic Devices ◽  
Layer By Layer ◽  
Photonic Band Gap Structure ◽  
Band Gap Structure

ABSTRACTWe demonstrate the fabrication of a three-dimensional woodpile photonic crystal in the near-infrared regime using a layer-by-layer approach involving electron-beam lithography and spin-on-glass planarization. Using this approach we have shown that we can make structures with lattice spacings as small as 550 nm with silicon as well as gold thus allowing for fabrication of photonic crystals with omnidirectional gap in the visible and near-IR. As a proof of concept we performed optical reflectivity and transmission measurements on a silicon structure which reveal peaks and valleys expected for a photonic band gap structure. The approach described here can be scaled down to smaller lattice constants (down to ∼400 nm) and can also be used with a variety of materials (dielectric and metallic) thus enabling rapid prototyping full three-dimensional photonic bandgap based photonic devices in the visible.

Nano-silicon based photonic crystal stamps with electron beam lithography (EBL) technology

2010 ◽  
Author(s):  
Reyhaneh Jannesari ◽  
Iris Bergmair ◽  
Saeid Zamiri ◽  
Kurt Hingerl
Keyword(s):  
Electron Beam ◽  
Photonic Crystal ◽  
Electron Beam Lithography ◽  
Nano Silicon ◽  
Silicon Based

Fabrication of Two-dimensional Nonlinear Photonic Crystal by Electron Beam Lithography

2003 ◽  
Vol 797 ◽  
Author(s):  
Chiang Huen Kang ◽  
Ze Xiang Shen ◽  
Sing Hai Tang
Keyword(s):  
Electron Beam ◽  
Photonic Crystal ◽  
Electron Beam Lithography ◽  
Electrostatic Force ◽  
Frequency Doubling ◽  
Uniform Domain ◽  
Two Dimensional ◽  
Force Microscopy ◽  
Nonlinear Photonic Crystal ◽  
Domain Inversion

ABSTRACTIn this paper, we present a study on quasi-phase matched (QPM) two-dimensional χ(2) lithium niobate (LN) nonlinear photonic crystal (NPC) for frequency doubling at λ = 1064nm. The NPCs were fabricated by electron beam lithography (EBL) through periodic polarization inversion of the ferroelectric domains and characterized with electrostatic force microscopy (EFM), atomic force microscopy and optical microscopy. Domain inversion occurred through the entire wafer thickness of 0.5mm as EFM images on the +c face of the z-cut wafer showed uniform domain structures throughout the corresponding electron beam irradiated regions of the -c face. In addition, the intended periodicity was observed. Moreover, domain inversion was also seen to have taken place in bulk from the optical images of the chemically etched samples. The EBL technique offers great flexibility in superlattice design and relative ease of fabrication as compared to the conventional poling techniques as pattern transfer is direct without the need for a mask and/or a coating of resist. Besides, micro- or sub-micro scale superlattices corresponding to wavelengths in the visible and into the ultraviolet are highly feasible, restricted only by the transparency of the crystals.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Photonic Waveguides ◽  
Proximity Effect Correction
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