Polarization-independent 90°-turns in single-mode micro-waveguides on silicon-on-insulator wafers for telecommunication wavelengths

2004 ◽  
Vol 235 (1-3) ◽  
pp. 83-88 ◽  
Author(s):  
Eric Cassan ◽  
Laurent Vivien ◽  
Suzanne Laval
2002 ◽  
Vol 210 (1-2) ◽  
pp. 43-49 ◽  
Author(s):  
L Vivien ◽  
S Laval ◽  
B Dumont ◽  
S Lardenois ◽  
A Koster ◽  
...  

2005 ◽  
Vol 23 (6) ◽  
pp. 2103-2111 ◽  
Author(s):  
Seong Phun Chan ◽  
Ching Eng Png ◽  
Soon Thor Lim ◽  
G.T. Reed ◽  
V.M.N. Passaro

2008 ◽  
Vol 26 (13) ◽  
pp. 1840-1846 ◽  
Author(s):  
Milan M. Milosevic ◽  
Petar S. Matavulj ◽  
Branislav D. Timotijevic ◽  
Graham T. Reed ◽  
Goran Z. Mashanovich

2012 ◽  
Vol 21 (01) ◽  
pp. 1250004 ◽  
Author(s):  
HAZURA HAROON ◽  
SAHBUDIN SHAARI ◽  
P. S. MENON ◽  
B. MARDIANA ◽  
A. R. HANIM ◽  
...  

We report in this paper, an optimized design and characterization of SOI based single mode, four channels wavelength demultiplexer using microrings. The usage of silicon-on-insulator (SOI) allows a wide free spectral range (FSR) for the device that is crucial in developing ultra-compact integrations of planar lightwave circuits (PLCs). The characterizations are done using Finite-Difference Time-Domain (FDTD) mode simulations from RSOFT. Serially cascaded microring arrays up to the third order are presented to study the design trade-off among the FSR, Q-factor and optical losses of the laterally coupled wavelength demultiplexer. The demultiplexer is expected to be working at C-band region of Wavelength Division Multilplexing (WDM) for a wavelength around 1550 nm. Our proposed demultiplexer has low insertion loss (< 0.5 dB) and a crosstalk around 12 ~ 19 dB.


2012 ◽  
Vol 462 ◽  
pp. 532-535
Author(s):  
Abdul Razak Hanim ◽  
Haroon Hazura ◽  
Bidin Mardiana ◽  
Shaari Sahbudin ◽  
P. Susthitha Menon

The analyses of the simulation of a single mode buried waveguide optical phase modulator based on SOI material are here reported. The structure has been simulated by Athena from Silvaco simulation package. The buried waveguide is created by doping phosphorus with concentration of 10e15 cm-3 into the substrate. The real refractive index and the absorption coefficient of the waveguide are changed using the free carrier dispersion effect via carrier injection of a pn junction. The efficiency, VπLπ is calculated and the performance is compared with that of the rib waveguide optical phase modulator of the same material and dimensions. Simulation shows that the device can be an efficient device for application in intensity modulation.


1991 ◽  
Vol 244 ◽  
Author(s):  
J. Schmidtchen ◽  
B. Schüppert ◽  
A. Splett ◽  
K. Petermann

ABSTRACTThe realization of single-mode rib-waveguides with dimensions of several micrometers in Silicon-On-Insulator (SOI) is reported. The predicted monomode behaviour is confirmed by comparison of a simulated and a measured nearfield intensity distribution. Waveguide losses below 0.5dB/cm were obtained at wavelengths of 1.3μm and 1.55μm, respectively, independent of the polarization state.


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