Low-energy magnetic dipole response in 56Fe from high-resolution electron scattering

2003 ◽  
Vol 727 (1-2) ◽  
pp. 41-55 ◽  
Author(s):  
R.W. Fearick ◽  
G. Hartung ◽  
K. Langanke ◽  
G. Martínez-Pinedo ◽  
P. von Neumann-Cosel ◽  
...  
2019 ◽  
Vol 21 (43) ◽  
pp. 23808-23817
Author(s):  
V. Lemelin ◽  
A. D. Bass ◽  
P. Cloutier ◽  
L. Sanche

Absolute vibrational cross sections for low energy (1–19 eV) electron scattering from condensed thymidine using high-resolution electron energy loss spectroscopy.


2000 ◽  
Vol 639 ◽  
Author(s):  
Philomela Komninou ◽  
Joseph Kioseoglou ◽  
Eirini Sarigiannidou ◽  
George P. Dimitrakopulos ◽  
Thomas Kehagias ◽  
...  

ABSTRACTThe interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.


1989 ◽  
Vol 153 ◽  
Author(s):  
Karl L. Merkle

AbstractThe atomic structure of internal interfaces in dense-packed systems has been investigated by high-resolution electron microscopy (HREM). Similarities between the atomic relaxations in heterophase Interfaces and certain largeangle grain boundaries have been observed. In both types of interfaces localization of misfit leads to regions of good atomic matching within the interface separated by misfit dislocation-like defects. It appears that, whenever possible, the GB structures assume configurations in which the atomic coordination is not too much different from the ideal lattice. It is suggested that these kinds of relaxations primarily occur whenever the translational periods along the GB are large or when the interatomic distances are incommensurate. Incorporation of low index planes into the GB appears to lead to preferred, i.e. low energy structures, that can be quite dense with good atomic matching across a large fraction of the interface.


Author(s):  
D. Bohle ◽  
Th. Guhr ◽  
U. Hartmann ◽  
K.-D. Hummel ◽  
G. Kilgus ◽  
...  

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