scholarly journals Molecular dynamics simulation of helium ion implantation into silicon and its migration

2019 ◽  
Vol 456 ◽  
pp. 53-59 ◽  
Author(s):  
Lei Liu ◽  
Zongwei Xu ◽  
Rongrong Li ◽  
Rui Zhu ◽  
Jun Xu ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Ion Implantation ◽  
Dynamics Simulation ◽  
Helium Ion

Photoluminescence study of defects induced by B10H14 ions

2001 ◽  
Vol 669 ◽  
Author(s):  
Noriaki Toyoda ◽  
Takaaki Aoki ◽  
Jiro Matsuo ◽  
Isao Yamada ◽  
Kazumi Wada ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Ion Implantation ◽  
Defect Formation ◽  
Rutherford Backscattering Spectrometry ◽  
Annealing Process ◽  
Dynamics Simulation ◽  
Line Center ◽  
Photoluminescence Study ◽  
Defect Reactions

ABSTRACTDefect formation in Si by B10H14 (decaborane) ion implantation has been investigated with photoluminescence measurement. An intense W-line was observed at photon energy of 1.018eV from as-implanted FZ-Si by 30keV B10H14+ implantation. W-line center is considered as an interstitial aggregate and usually observed after ion implantation with subsequent low-temperatureannealing in the case of atomic ion implantation. As W-line is observed from as-implanted Si, the defect formation with B10H14 is expected to be different from that of B+ implantation with the same energy per atom. The energy dependence of W-line intensity is similar to that of diffusivity enhancement after rapid thermal annealing. Molecular dynamics simulation and Rutherford backscattering spectrometry channeling experiment suggest that one B10H14 implantation creates a larger number of dislocated Si atoms than that of B+ implantation with the same energy per atom. This characteristic of B10H14 implantation may cause the different defect reactions in subsequent annealing process.

Sign in / Sign up

Export Citation Format

Share Document