Nonlinear electronic stopping power of channeled slow light ions in ZnSe: Evidence of energy loss caused by formation and breaking of chemical bond

2018 ◽  
Vol 426 ◽  
pp. 41-45 ◽  
Author(s):  
Chang-kai Li ◽  
Feng Wang ◽  
Cong-Zhang Gao ◽  
Bin Liao ◽  
Xiao-ping Ouyang ◽  
...  
Keyword(s):  
Energy Loss ◽  
Chemical Bond ◽  
Slow Light ◽  
Stopping Power ◽  
Light Ions ◽  
Electronic Stopping Power

scholarly journals Ab initio electronic stopping power for protons in Ga 0.5 In 0.5 P/GaAs/Ge triple-junction solar cells for space applications

2020 ◽  
Vol 7 (11) ◽  
pp. 200925
Author(s):  
Natalia E. Koval ◽  
Fabiana Da Pieve ◽  
Emilio Artacho
Keyword(s):  
Solar Cells ◽  
Energy Loss ◽  
Ab Initio ◽  
Triple Junction ◽  
Density Functional ◽  
Interface Energy ◽  
Stopping Power ◽  
Low Velocity ◽  
Space Applications ◽  
Electronic Stopping Power

Motivated by the radiation damage of solar panels in space, firstly, the results of Monte Carlo particle transport simulations are presented for proton impact on triple-junction Ga 0.5 In 0.5 P/GaAs/Ge solar cells, showing the proton projectile penetration in the cells as a function of energy. It is followed by a systematic ab initio investigation of the electronic stopping power (ESP) for protons in different layers of the cell at the relevant velocities via real-time time-dependent density functional theory calculations. The ESP is found to depend significantly on different channelling conditions, which should affect the low-velocity damage predictions, and which are understood in terms of impact parameter and electron density along the path. Additionally, we explore the effect of the interface between the layers of the multilayer structure on the energy loss of a proton, along with the effect of strain in the lattice-matched solar cell. Both effects are found to be small compared with the main bulk effect. The interface energy loss has been found to increase with decreasing proton velocity, and in one case, there is an effective interface energy gain.

Electronic stopping power of slow-light channeling ions in ZnTe from first principles

2017 ◽  
Vol 95 (5) ◽  
Author(s):  
Chang-kai Li ◽  
Fei Mao ◽  
Feng Wang ◽  
Yan-long Fu ◽  
Xiao-ping Ouyang ◽  
...  
Keyword(s):  
First Principles ◽  
Slow Light ◽  
Stopping Power ◽  
Electronic Stopping Power

scholarly journals Ab initioelectronic stopping power and threshold effect of channeled slow light ions inHfO2

2017 ◽  
Vol 96 (9) ◽  
Author(s):  
Chang-Kai Li ◽  
Feng Wang ◽  
Bin Liao ◽  
Xiao-Ping OuYang ◽  
Feng-Shou Zhang
Keyword(s):  
Slow Light ◽  
Threshold Effect ◽  
Stopping Power ◽  
Light Ions

scholarly journals Directional dependency of electronic stopping in nickel, projectile’s excited charge state and momentum transfer

2021 ◽  
Vol 75 (11) ◽  
Author(s):  
Edwin E. Quashie ◽  
Xavier Andrade ◽  
Alfredo A. Correa
Keyword(s):  
Momentum Transfer ◽  
Density Functional ◽  
Reasonable Agreement ◽  
Stopping Power ◽  
Functional Theory ◽  
Ab Initio Simulations ◽  
Light Ions ◽  
Electronic Densities ◽  
First Time ◽  
Electronic Stopping Power

AbstractWe studied the directional dependency of electronic stopping power of swift light ions in nickel using real-time time-dependent density functional theory. We report a variation of electronic stopping for moving ions as the projectile probes different electronic densities of the host material. These results show that while the predicted magnitude stays in reasonable agreement with experiment, for $$v > 2$$ v > 2 . a.u. simulating only low index crystallographic directions is not enough to sample the experimental average values. The ab initio simulations give us access to microscopic quantities, such as non-adiabatic forces, momentum transfer and transient excited state charges of the projectile and host ions, which are not available through other methods. We report these quantities for the first time.

scholarly journals The dependence of heavy-ion-induced adhesion on energy loss and time

1986 ◽  
Vol 1 (2) ◽  
pp. 231-233 ◽  
Author(s):  
R.G. Stokstad ◽  
P.M. Jacobs ◽  
I. Tserruya ◽  
L. Sapir ◽  
G. Mamane
Keyword(s):  
Energy Loss ◽  
Gold Film ◽  
Peel Test ◽  
Heavy Ion ◽  
Ion Beams ◽  
Stopping Power ◽  
Metallic Films ◽  
Thin Gold Film ◽  
Native Oxides ◽  
Electronic Stopping Power

The ability of heavy-ion beams to enhance the adhesion of thin metallic films to substrates has been studied as a function of projectile species. Measurements of the adhesion enhancement of a thin gold film to substrates of tantalum and silicon (with native oxides) have been made for beams of 12C, 16O, 28Si, 35Cl, and 58Ni at 2.85 MeV/nucleon. The threshold dose required to pass the Scotch tape peel test was found for the Au-Ta system to be D th (cm−2) = 1017 (dE / dx)−3±0.2 where dE/dx is the electronic stopping power (MeV mg−1 cm−2) of the ion in Au. For the Au-Si system, Dth = 6×1018 (dE/dx)−4.1±0.3. The steep dependence of D th on dE/dx found here is in contrast with an earlier measurement for the Au-Ta system by Tombrello et al. The adhesion enhancement was observed to decrease with time after the bombardment in a manner suggesting that diffusion of atoms through the gold film is important. The possible importance of small concentrations of extraneous atoms at the interface is discussed.

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