Thermal stability of radiation-induced optical centers in non-stoichiometric spinel crystals

2006 ◽  
Vol 250 (1-2) ◽  
pp. 349-353 ◽  
Author(s):  
V.T. Gritsyna ◽  
Yu.G. Kazarinov
Keyword(s):  
Thermal Stability ◽  
Radiation Induced ◽  
Thermal Stability Of

Nature and thermal stability of radiation-induced defects in zirconium hydride

1976 ◽  
Vol 40 (4) ◽  
pp. 356-359 ◽  
Author(s):  
P. G. Pinchuk ◽  
V. N. Bykov ◽  
G. A. Birzhevoi ◽  
Yu. V. Alekseev ◽  
A. G. Vakhtin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Zirconium Hydride ◽  
Radiation Induced ◽  
Induced Defects ◽  
Thermal Stability Of

Comparison of the electrical and thermal stability of stress- or radiation-induced leakage current in thin oxides

2000 ◽  
Vol 76 (9) ◽  
pp. 1158-1160 ◽  
Author(s):  
P. Riess ◽  
M. Ceschia ◽  
A. Paccagnella ◽  
G. Ghibaudo ◽  
G. Pananakakis
Keyword(s):  
Thermal Stability ◽  
Leakage Current ◽  
Radiation Induced ◽  
Thermal Stability Of

Thermal stability of radiation-induced optical absorption in quartz

1976 ◽  
Vol 19 (6) ◽  
pp. 780-782
Author(s):  
V. G. Zubov ◽  
N. G. Kirillova ◽  
N. D. Kundikova ◽  
L. P. Osipova
Keyword(s):  
Thermal Stability ◽  
Optical Absorption ◽  
Radiation Induced ◽  
Thermal Stability Of

scholarly journals Люминесценция дефектов F-типа и их термическая стабильность в сапфире, облученном импульсными ионными пучками

2020 ◽  
Vol 128 (2) ◽  
pp. 211
Author(s):  
Д.В. Ананченко ◽  
С.В. Никифоров ◽  
Г.Р. Рамазанова ◽  
Р.И. Баталов ◽  
Р.М. Баязитов ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Optical Absorption ◽  
Single Crystals ◽  
Ion Beam ◽  
Pulsed Cathodoluminescence ◽  
Ion Beam Treatment ◽  
Radiation Induced ◽  
The Stability ◽  
Induced Defects ◽  
Thermal Stability Of

Luminescence and thermal stability of defects formed in alpha-Al2O3 single crystals under pulsed ion beam treatment (C+/H+ ions with an energy 300 keV, pulse duration 80 ns) were investigated. This type of irradiation leads to the intensive generation of both single F- and F+-centers and more complex defects (F2-type aggregate centers or vacancy-impurity complexes) in alpha-Al2O3. It was confirmed by the results of optical absorption, photoluminescence, and pulsed cathodoluminescence measurements. The thermal stability of F-type defects formed in alpha-Al2O3 under the pulsed ion beam treatment is comparable to the stability of radiation-induced defects in neutron-irradiated samples.

scholarly journals Erratum to: The thermal stability of radiation-induced defects in illite

2015 ◽  
Vol 43 (1) ◽  
pp. 31-31
Author(s):  
T. Riegler ◽  
T. Allard ◽  
D. Beaufort ◽  
J.-L. Cantin ◽  
H. J. von Bardeleben
Keyword(s):  
Thermal Stability ◽  
Radiation Induced ◽  
Induced Defects ◽  
Thermal Stability Of

The thermal stability of radiation-induced defects in illite

2015 ◽  
Vol 43 (1) ◽  
pp. 23-30 ◽  
Author(s):  
T. Riegler ◽  
T. Allard ◽  
D. Beaufort ◽  
J.-L. Cantin ◽  
H. J. von Bardeleben
Keyword(s):  
Thermal Stability ◽  
Radiation Induced ◽  
Induced Defects ◽  
Thermal Stability Of

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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