Charge collection characterization of a 3D silicon radiation detector by using 3D simulations

Author(s):  
Juha Kalliopuska ◽  
Simo Eränen ◽  
Risto Orava
2017 ◽  
Vol 88 (9) ◽  
pp. 093503 ◽  
Author(s):  
Jungmin Jo ◽  
MunSeong Cheon ◽  
Junghee Kim ◽  
YoungHwa An ◽  
Seungil Park ◽  
...  

Author(s):  
Daniel Nolasco Altamirano ◽  
Teodoro Rivera Montalvo ◽  
Olivia Amanda García Garduño ◽  
Alejandro Alonso Sotolongo ◽  
Juan Zárate Medina

2009 ◽  
Vol 24 (4) ◽  
pp. 1361-1367 ◽  
Author(s):  
M.C. Duff ◽  
D.B. Hunter ◽  
A. Burger ◽  
M. Groza ◽  
V. Buliga ◽  
...  

Synthetic Cd1–xZnxTe or “CZT” crystals are highly suitable for γ-spectrometers operating at room temperature. Secondary phases (SP) within CZT, presumed to be Te metal, have detrimental impacts on the charge collection efficiency of fabricated device. Using analytical techniques rather than arbitrary theoretical definitions, we identify two SP morphologies: (i) many void, 20-μm “negative” crystals with 65-nm nanoparticle residues of Si, Cd, Zn, and Te and (ii) 20-μm hexagonal-shaped bodies, which are composites of metallic Te layers with cores of amorphous and polycrystalline CZT material that surround the voids.


2013 ◽  
Author(s):  
U. N. Roy ◽  
A. E. Bolotnikov ◽  
G. S. Camarda ◽  
Y. Cui ◽  
A. Hossain ◽  
...  

1981 ◽  
Vol 5 ◽  
Author(s):  
O. Paz ◽  
K. N. Bhat ◽  
J. M. Borrego

ABSTRACTN–type Ga-As polycrystalline layers, grown on Mo substrates by the metal-organic process were investigated using the SEM. Micrographs of charge collection contrast indicate a fairly random distribution of high collection (bright) grains. In a typical cell about 1/3 of its area is bright, with nonuniformities in collection current within and between grains. These results correlate well with Isc measurements, and some of the variations betweencells is explained in terms of insufficient doping of the grain boundaries.Reducing the penetrating depth of the carriers' excitation volume results in lowering of the collection current. The measurements were normalized for changes in beam and EBIC current by a comparison with a single crystal cell of the same geometry. This degradation is explained in terms of contamination or damage of the layer close to the surface during growth.


Author(s):  
Jan Zemlicka ◽  
Jan Jakubek ◽  
Martin Jakubek ◽  
Zdenek Vykydal ◽  
Georgy A. Chelkov ◽  
...  
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