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A cryogenic set-up for low-frequency noise characterization of electronic devices
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
◽
10.1016/j.nima.2003.11.366
◽
2004
◽
Vol 520
(1-3)
◽
pp. 644-646
◽
Cited By ~ 1
Author(s):
C Arnaboldi
◽
G Boella
◽
R Mazza
◽
E Panzeri
◽
G Pessina
Keyword(s):
Electronic Devices
◽
Low Frequency
◽
Frequency Noise
◽
Low Frequency Noise
◽
Set Up
◽
Noise Characterization
Download Full-text
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Using low-frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction
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2004
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Low frequency noise characterization of the GaN LEDs
The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004.
◽
10.1109/asdam.2004.1441163
◽
2005
◽
Author(s):
S. Bychikhin
◽
L.K.J. Vandamme
◽
J. Kuzmik
◽
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◽
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Low-frequency Noise Characterization of Hot-electron Degradation in GaN-based HEMTs
10.1063/1.2036753
◽
2005
◽
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Author(s):
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Low Frequency
◽
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◽
Hot Electron
◽
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◽
Noise Characterization
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Low-frequency noise characterization of latent damage in thin oxides subjected to high-field impulse stressing
IEEE Electron Device Letters
◽
10.1109/55.720187
◽
1998
◽
Vol 19
(10)
◽
pp. 363-366
◽
Cited By ~ 4
Author(s):
W.K. Chim
◽
B.P. Yeo
◽
P.S. Lim
◽
D.S.H. Chan
Keyword(s):
High Field
◽
Low Frequency
◽
Frequency Noise
◽
Low Frequency Noise
◽
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Analysis of low-frequency noise characterisation set-up for electronic devices
2018 Australian Microwave Symposium (AMS)
◽
10.1109/ausms.2018.8346971
◽
2018
◽
Author(s):
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◽
Michael Heimlich
◽
Sourabh Khandelwal
Keyword(s):
Electronic Devices
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Low Frequency
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Frequency Noise
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In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature
Solid-State Electronics
◽
10.1016/j.sse.2014.04.001
◽
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◽
Vol 98
◽
pp. 12-19
◽
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◽
B. Cretu
◽
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◽
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◽
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◽
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Cryogenic Temperature
◽
Low Frequency
◽
Frequency Noise
◽
Low Frequency Noise
◽
Noise Characterization
◽
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Dynamic and low-frequency noise characterization of si-ge heterojunction-bipolar transistors at cryogenic temperatures
IEEE Transactions on Nuclear Science
◽
10.1109/tns.2003.814590
◽
2003
◽
Vol 50
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◽
pp. 921-927
◽
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C. Arnaboldi
◽
G. Boella
◽
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◽
Low Frequency
◽
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◽
Frequency Noise
◽
Cryogenic Temperatures
◽
Low Frequency Noise
◽
Noise Characterization
Download Full-text
Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films
IEEE Electron Device Letters
◽
10.1109/55.511586
◽
1996
◽
Vol 17
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◽
pp. 395-397
◽
Cited By ~ 42
Author(s):
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◽
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◽
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◽
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◽
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◽
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DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTs
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◽
10.1016/j.tsf.2008.08.020
◽
2008
◽
Vol 517
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◽
pp. 6-9
◽
Cited By ~ 3
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Low Frequency
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Low-Frequency Noise Characterization of Ultra-Low Equivalent-Oxide-Thickness Thulium Silicate Interfacial Layer nMOSFETs
IEEE Electron Device Letters
◽
10.1109/led.2015.2494678
◽
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◽
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◽
pp. 1355-1358
◽
Cited By ~ 1
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◽
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◽
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◽
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◽
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◽
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◽
Oxide Thickness
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Frequency Noise
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Equivalent Oxide Thickness
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Noise Characterization
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