scholarly journals Calibration-free real-time organic film thickness monitoring technique by reflected X-Ray fluorescence and compton scattering measurement

Author(s):  
Junghwan Park ◽  
Yong Suk Choi ◽  
Junhyuck Kim ◽  
Jeongmook Lee ◽  
Tae Jun Kim ◽  
...  
2005 ◽  
Vol 32 (6Part1) ◽  
pp. 1542-1547 ◽  
Author(s):  
Koji Maeda ◽  
Masao Matsumoto ◽  
Akira Taniguchi

1996 ◽  
Vol 54 (20) ◽  
pp. 14686-14691 ◽  
Author(s):  
R. L. Headrick ◽  
S. Kycia ◽  
Y. K. Park ◽  
A. R. Woll ◽  
J. D. Brock

2006 ◽  
Vol 508 ◽  
pp. 567-572 ◽  
Author(s):  
Axel Griesche ◽  
F. Garcia-Moreno ◽  
M.P. Macht ◽  
Günter Frohberg

The long-capillary method was used to measure chemical diffusion in molten AlNiCe alloys. The interdiffusion coefficients were determined for a mean concentration of Al87Ni10Ce3 at 1273 K and for a mean concentration of Al77Ni20Ce3 at 1373 K. The absence of major convection disturbances and of macro-segregation was demonstrated by time-dependent diffusion measurements. An in-situ x-ray monitoring technique for real-time concentration profile determination is presented.


Author(s):  
John C. Russ ◽  
Nicholas C. Barbi

The rapid growth of interest in attaching energy-dispersive x-ray analysis systems to transmission electron microscopes has centered largely on microanalysis of biological specimens. These are frequently either embedded in plastic or supported by an organic film, which is of great importance as regards stability under the beam since it provides thermal and electrical conductivity from the specimen to the grid.Unfortunately, the supporting medium also produces continuum x-radiation or Bremsstrahlung, which is added to the x-ray spectrum from the sample. It is not difficult to separate the characteristic peaks from the elements in the specimen from the total continuum background, but sometimes it is also necessary to separate the continuum due to the sample from that due to the support. For instance, it is possible to compute relative elemental concentrations in the sample, without standards, based on the relative net characteristic elemental intensities without regard to background; but to calculate absolute concentration, it is necessary to use the background signal itself as a measure of the total excited specimen mass.


1986 ◽  
Vol 47 (10) ◽  
pp. 1791-1795 ◽  
Author(s):  
M. Ribet ◽  
S. Gits-Léon ◽  
F. Lefaucheux ◽  
M.C. Robert
Keyword(s):  

2018 ◽  
Vol 2018 (1) ◽  
pp. 162-165
Author(s):  
Shin Mizutani ◽  
Daichi Yamaguchi ◽  
Takeshi Fujiwara ◽  
Masato Yasumoto ◽  
Ryunosuke Kuroda
Keyword(s):  
X Ray ◽  

2010 ◽  
Vol 9 (1) ◽  
pp. 133-140
Author(s):  
Petrisor Zamora Iordache ◽  
Nicoleta Petrea ◽  
Vasile Somoghi ◽  
Mihaela Muresan ◽  
Gabriel Epure ◽  
...  

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.


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