Cathodoluminescence and photoluminescence of swift ion irradiation modified zinc oxide-porous silicon nanocomposite

2012 ◽  
Vol 177 (16) ◽  
pp. 1476-1481 ◽  
Author(s):  
Yogesh Kumar ◽  
Manuel Herrera ◽  
Fouran Singh ◽  
S.F. Olive-Méndez ◽  
D. Kanjilal ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Porous Silicon ◽  
Ion Irradiation

scholarly journals White and UV Emission from Swift Ion Irradiation Modified Zinc Oxide-Porous Silicon Nanocomposite through Cathodoluminescence Spectroscopy

2012 ◽  
Vol 29 ◽  
pp. 12-17
Author(s):  
Yogesh Kumar ◽  
Manuel Herrera ◽  
Fouran Singh ◽  
K. Upendra Kumar ◽  
Shiv Kumar ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Porous Silicon ◽  
Ion Irradiation ◽  
Uv Emission ◽  
Cathodoluminescence Spectroscopy

scholarly journals Electroluminescent Devices Based on Junctions of Indium Doped Zinc Oxide and Porous Silicon

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
F. Severiano ◽  
G. García ◽  
L. Castañeda ◽  
J. M. Gracia-Jiménez ◽  
Heberto Gómez-Pozos ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Porous Silicon ◽  
Spray Pyrolysis Technique ◽  
Visible Region ◽  
Electrical Characterization ◽  
Ultrasonic Spray Pyrolysis ◽  
Hole Injection ◽  
Electroluminescent Devices ◽  
Ultrasonic Spray Pyrolysis Technique ◽  
Ultrasonic Spray

Electroluminescent devices (ELD) based on junctions of indium doped zinc oxide (ZnO:In) and porous silicon layers (PSL) are presented in this work. PSL with different thicknesses and photoluminescent emission, around 680 nm, were obtained by anodic etching. PSL were coated with a ZnO:In film which was obtained by ultrasonic spray pyrolysis technique. Once obtained, this structure was optically and electrically characterized. When the devices were electrically polarized they showed stable electroluminescence (EL) which was presented as dots scattered over the surface. These dots can be seen with the naked eye. The observed EL goes from the 410 to 1100 nm, which is formed by different emission bands. The EL emission in the visible region was around 400 to 750 nm, and the emission corresponding to the infrared part covers the 750 to 1150 nm. The electrical characterization was carried out by current-voltage curves(I-V)which show a rectifying behavior of the devices. Observed electroluminescent dots are associated with the electron-hole injection into quantized states in PS as well as the emission from the ZnO:In film.

scholarly journals Porous Silicon-Zinc Oxide Nanocomposites Prepared by Atomic Layer Deposition for Biophotonic Applications

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1987 ◽  
Author(s):  
Mykola Pavlenko ◽  
Valerii Myndrul ◽  
Gloria Gottardi ◽  
Emerson Coy ◽  
Mariusz Jancelewicz ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Porous Silicon ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Visible Range ◽  
Optical Biosensing ◽  
X Ray ◽  
Layer Deposition

In the current research, a porous silicon/zinc oxide (PSi/ZnO) nanocomposite produced by a combination of metal-assisted chemical etching (MACE) and atomic layer deposition (ALD) methods is presented. The applicability of the composite for biophotonics (optical biosensing) was investigated. To characterize the structural and optical properties of the produced PSi/ZnO nanocomposites, several studies were performed: scanning and transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), diffuse reflectance, and photoluminescence (PL). It was found that the ALD ZnO layer fully covers the PSi, and it possesses a polycrystalline wurtzite structure. The effect of the number of ALD cycles and the type of Si doping on the optical properties of nanocomposites was determined. PL measurements showed a “shoulder-shape” emission in the visible range. The mechanisms of the observed PL were discussed. It was demonstrated that the improved PL performance of the PSi/ZnO nanocomposites could be used for implementation in optical biosensor applications. Furthermore, the produced PSi/ZnO nanocomposite was tested for optical/PL biosensing towards mycotoxins (Aflatoxin B1) detection, confirming the applicability of the nanocomposites.

Fabrication of patterned porous silicon using high-energy ion irradiation

2006 ◽  
Vol 13 (3-4) ◽  
pp. 259-261 ◽  
Author(s):  
E. J. Teo ◽  
M. B. H. Breese ◽  
A. A. Bettiol ◽  
F. J. T. Champeaux ◽  
F. Watt ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Ion Irradiation ◽  
High Energy

175 MeV Au[sup +13] ion irradiation induced structural and morphological modifications in zinc oxide thin films

2013 ◽  
Author(s):  
Devendra Singh ◽  
Aditya Sharma ◽  
Mayora Varshney ◽  
Shalendra Kumar ◽  
K. D. Verma
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Ion Irradiation ◽  
Oxide Thin Films

Growth and optical properties of quadrangular zinc oxide nanorods on copper-filled porous silicon

2004 ◽  
Vol 79 (3) ◽  
pp. 443-446 ◽  
Author(s):  
K. Yu ◽  
Y. Zhang ◽  
L. Luo ◽  
W. Wang ◽  
Z. Zhu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Porous Silicon ◽  
Zinc Oxide Nanorods ◽  
Oxide Nanorods

The modification of the properties of n-type conductivity porous silicon by argon ion irradiation

Vacuum ◽  
2004 ◽  
Vol 73 (1) ◽  
pp. 105-108 ◽  
Author(s):  
B.M. Kostishko ◽  
Yu.S. Nagornov ◽  
S.V. Appolonov
Keyword(s):  
Porous Silicon ◽  
Ion Irradiation ◽  
Type Conductivity ◽  
Argon Ion

The effects of ion irradiation on porous silicon photoluminescence

2005 ◽  
Vol 97 (3) ◽  
pp. 033528 ◽  
Author(s):  
L. G. Jacobsohn ◽  
B. L. Bennett ◽  
D. W. Cooke ◽  
R. E. Muenchausen ◽  
M. Nastasi
Keyword(s):  
Porous Silicon ◽  
Ion Irradiation
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