Influence of vanadium doping on the processing temperature and dielectric properties of barium bismuth niobate ceramics

2006 ◽  
Vol 129 (1-3) ◽  
pp. 245-250 ◽  
Author(s):  
C. Karthik ◽  
K.B.R. Varma
Keyword(s):  
Dielectric Properties ◽  
Processing Temperature ◽  
Bismuth Niobate ◽  
Vanadium Doping ◽  
Barium Bismuth

Influence of pyrochlore phase on the dielectric properties of the bismuth niobate system

2021 ◽  
Vol 263 ◽  
pp. 114880
Author(s):  
A.J.M. Sales ◽  
B.M.G. Melo ◽  
S. Soreto Teixeira ◽  
S. Devesa ◽  
R.G.M. Oliveira ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Pyrochlore Phase ◽  
Bismuth Niobate

Leakage Current and Dielectric Properties of Ba0.5Sr0.5TiO3 Films Deposited by RF Sputtering at Low Substrate Temperature

2003 ◽  
Vol 768 ◽  
Author(s):  
Nicholas Cramer ◽  
Thottam S. Kalkur ◽  
Elliot Philofsky ◽  
Lee Kammerdiner
Keyword(s):  
Dielectric Properties ◽  
Substrate Temperature ◽  
Leakage Current ◽  
Rf Sputtering ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Temperature Limit ◽  
Film Deposition ◽  
Processing Temperature ◽  
Device Applications

AbstractMost studies of Ba0.5Sr0.5TiO3 (BST) thin film deposition have focused on chemical vapor deposition or spin-on techniques. Both these techniques require high substrate temperature (greater than 600 °C), either during the deposition or during an anneal after deposition. A few groups have reported on sputtered films, but most of these studies also used high-temperature processes. While such temperatures are compatible with poly-Si plug DRAM and related technologies, they are far above the limits for technologies that require the deposition of non-refractory metals before the deposition of the ceramic film. For example, the use of Al metalization before the deposition of BST would limit the BST processing temperature to about 450 °C. A process compatible with such a temperature limit is reported. Such a process makes fabrication of high quality BST thin films difficult, primarily due to the need for oxidation and grain growth in the ceramic. The leakage current and dielectric properties of BST films deposited in such a process are reported and are shown to be sufficient for practical device applications.

Dielectric Properties of (Ba,Sr)TiO3 Thin Film Capacitors Fabricated on Alumina Substrates

2002 ◽  
Vol 748 ◽  
Author(s):  
I. P. Koutsaroff ◽  
A. Kassam ◽  
M. Zelner ◽  
P. Woo ◽  
L. McNeil ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Film Formation ◽  
Dissipation Factor ◽  
Processing Temperature ◽  
Polycrystalline Alumina ◽  
Annealing Conditions ◽  
Bst Films

ABSTRACTDouble layer (DL) Ba0.7Sr0.3TiO3 (BST) capacitors with Pt electrodes have been fabricated with similar growth conditions on different substrates. The substrates used in the present study were r-plane sapphire, polycrystalline alumina Al2O3 (99.6% and 96%), and glazed polycrystalline alumina. BST films were grown by metal-organic decomposition (MOD) method. By varying the annealing conditions which affects the formation of the crystalline structure, significant changes in the dielectric properties of the BST films have been observed. BST films were characterized by Field Emission Scanning Electron Microscopy (FE-SEM) and Powder X-ray Diffractometer (PXRD). These observations showed that BST films grown at lower temperatures on alumina substrates exhibited the smallest grain size. BST films of the same thickness prepared under the same thermal processing conditions showed higher capacitance when grown on all types of alumina-based substrates compared to those deposited on control SiO2/Si. The higher capacitance on alumina was always associated with larger dissipation factor, and lower or similar leakage current density. The final tuning, of the dielectric properties of BST DL capacitors on non-silicon substrates, was correlated to the initial film formation temperature and post-annealing conditions of the BST films. The leakage current density, of DL BST capacitors fabricated on glazed alumina, becomes smallest when the BST processing temperature was lowered by 100 °C compared to the control SiO2/Si. The typical achieved leakage current density for 1500×1500 μm2 DL capacitors on glazed alumina was 3.8×10-9 A/cm2 at 250 kV/cm (36.5 fF/μm2), about 3 times lower than on SiO2/Si substrates (1.1×10-8 A/cm2 at 250 kV/cm, 31 fF/μm2).

scholarly journals Dielectric properties of bismuth niobate films using LaNiO3 bottom electrode

2015 ◽  
Vol 27 (3) ◽  
pp. 2866-2874 ◽  
Author(s):  
L. F. Goncalves ◽  
L. S. R. Rocha ◽  
C. C. Silva ◽  
J. A. Cortés ◽  
M. A. Ramirez ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Bottom Electrode ◽  
Bismuth Niobate
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